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Nucleation and diffusion during growth of ternary Co1-xNixSi2 thin films studied by complementary techniques in real time

Dries Smeets, Jelle Demeulemeester, Koen De Keyser UGent, Davy Deduytsche UGent, Christophe Detavernier UGent, CM Comrie, CC Theron, Christian Lavoie and André Vantomme (2008) JOURNAL OF APPLIED PHYSICS. 104(9).
abstract
The growth kinetics of ternary Co1-xNixSi2 thin films was studied in real time. The "Kissinger" method was applied to the results of ramped sheet resistance measurements to extract the apparent activation energy for the growth process. By simultaneously acquiring sheet resistance, x-ray diffraction and laser light scattering data on one hand and combining resistance measurements and Rutherford backscattering spectrometry on the other hand, we could distinguish between the initial, nucleation controlled thin film growth, and the subsequent diffusion controlled growth. The apparent activation energy for the initial growth decreases with increasing Ni concentration as a result of a lower nucleation barrier for the ternary disilicide. The markedly different microstructure of the ternary Co1-xNixSi2 films with respect to pure CoSi2 layers lies at the origin of a lower activation energy for the diffusion controlled growth of the ternary films. Despite the low activation energy, these films grow at a much slower rate than CoSi2 films due to the large grain size and consequently lower density of grain boundary diffusion paths. These results explain the unexpected high thermal budget required for the formation of low resistivity Co1-xNixSi2 thin films. (c) 2008 American Institute of Physics.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
JOURNAL OF APPLIED PHYSICS
J. Appl. Phys.
volume
104
issue
9
pages
093533 -
Web of Science type
Article
Web of Science id
000260941700051
JCR category
PHYSICS, APPLIED
JCR impact factor
2.201 (2008)
JCR rank
21/95 (2008)
JCR quartile
1 (2008)
ISSN
0021-8979
DOI
10.1063/1.3013449
language
English
UGent publication?
yes
classification
A1
id
610612
handle
http://hdl.handle.net/1854/LU-610612
date created
2009-05-08 11:51:49
date last changed
2016-12-19 15:44:33
@article{610612,
  abstract     = {The growth kinetics of ternary Co1-xNixSi2 thin films was studied in real time. The {\textacutedbl}Kissinger{\textacutedbl} method was applied to the results of ramped sheet resistance measurements to extract the apparent activation energy for the growth process. By simultaneously acquiring sheet resistance, x-ray diffraction and laser light scattering data on one hand and combining resistance measurements and Rutherford backscattering spectrometry on the other hand, we could distinguish between the initial, nucleation controlled thin film growth, and the subsequent diffusion controlled growth. The apparent activation energy for the initial growth decreases with increasing Ni concentration as a result of a lower nucleation barrier for the ternary disilicide. The markedly different microstructure of the ternary Co1-xNixSi2 films with respect to pure CoSi2 layers lies at the origin of a lower activation energy for the diffusion controlled growth of the ternary films. Despite the low activation energy, these films grow at a much slower rate than CoSi2 films due to the large grain size and consequently lower density of grain boundary diffusion paths. These results explain the unexpected high thermal budget required for the formation of low resistivity Co1-xNixSi2 thin films. (c) 2008 American Institute of Physics.},
  author       = {Smeets, Dries and Demeulemeester, Jelle and De Keyser, Koen and Deduytsche, Davy and Detavernier, Christophe and Comrie, CM and Theron, CC and Lavoie, Christian and Vantomme, Andr{\'e}},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  language     = {eng},
  number       = {9},
  title        = {Nucleation and diffusion during growth of ternary Co1-xNixSi2 thin films studied by complementary techniques in real time},
  url          = {http://dx.doi.org/10.1063/1.3013449},
  volume       = {104},
  year         = {2008},
}

Chicago
Smeets, Dries, Jelle Demeulemeester, Koen De Keyser, Davy Deduytsche, Christophe Detavernier, CM Comrie, CC Theron, Christian Lavoie, and André Vantomme. 2008. “Nucleation and Diffusion During Growth of Ternary Co1-xNixSi2 Thin Films Studied by Complementary Techniques in Real Time.” Journal of Applied Physics 104 (9): 093533.
APA
Smeets, D., Demeulemeester, J., De Keyser, K., Deduytsche, D., Detavernier, C., Comrie, C., Theron, C., et al. (2008). Nucleation and diffusion during growth of ternary Co1-xNixSi2 thin films studied by complementary techniques in real time. JOURNAL OF APPLIED PHYSICS, 104(9), 093533.
Vancouver
1.
Smeets D, Demeulemeester J, De Keyser K, Deduytsche D, Detavernier C, Comrie C, et al. Nucleation and diffusion during growth of ternary Co1-xNixSi2 thin films studied by complementary techniques in real time. JOURNAL OF APPLIED PHYSICS. 2008;104(9):093533.
MLA
Smeets, Dries, Jelle Demeulemeester, Koen De Keyser, et al. “Nucleation and Diffusion During Growth of Ternary Co1-xNixSi2 Thin Films Studied by Complementary Techniques in Real Time.” JOURNAL OF APPLIED PHYSICS 104.9 (2008): 093533. Print.