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Electronic defect study on low temperature processed Cu(In,Ga)Se2 thin-film solar cells and the influence of an Sb layer

Lisanne Van Puyvelde, Johan Lauwaert UGent, A Tempez, Wouter Devulder, S Nishiwaki, F Pianezzi, Christophe Detavernier UGent, AN Tiwari and Henk Vrielinck UGent (2015) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 48(17).
abstract
A way to lower the manufacturing cost of Cu(In,Ga)Se-2 (CIGS) thin-film solar cells is to use flexible polymer substrates instead of rigid glass. Because such substrates require lower temperature during absorber deposition, the grain growth of the absorber layer can be hindered which leads to a lower cell performance. Partial compensation of this efficiency loss might be accomplished by growing the absorber in the presence of Sb, which is reported to promote grain growth. In this work CIGS solar cells, deposited on glass substrates, at a reduced substrate temperature with a thin Sb layer (7, 12 nm) on top of the Mo contact are investigated. The diffusion profile of Sb is measured with plasma profiling time of flight mass spectrometry. The beneficial effect of Sb on efficiency and grain size is shown in quantum efficiency measurements and with scanning electron microscopy, respectively. Electric spectroscopy is used to explore the possible effects on the defect structure, more in particular on the dominant shallow acceptor. Admittance spectra exhibit a capacitance step to the geometric capacitance plateau at low temperature (5-60 K). Analyzing this capacitance step, we obtained a good estimate of the activation energy of the intrinsic defects that provide the p-type conductivity of the CIGS absorber. The measurements did not show a change in the nature of the dominant acceptor upon Sb treatment.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
BULK, GROWTH, Sb layer, SPECTROSCOPY, Ga)Se2, Cu(ln, admittance spectroscopy, defects
journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
J Phys D
volume
48
issue
17
article number
175104
pages
7 pages
publisher
IOP
Web of Science type
Article
Web of Science id
000353329800005
JCR category
PHYSICS, APPLIED
JCR impact factor
2.772 (2015)
JCR rank
31/145 (2015)
JCR quartile
1 (2015)
ISSN
0022-3727
DOI
10.1088/0022-3727/48/17/175104
project
BOF-01N01611
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
5961751
handle
http://hdl.handle.net/1854/LU-5961751
date created
2015-05-20 15:12:37
date last changed
2016-12-21 15:42:33
@article{5961751,
  abstract     = {A way to lower the manufacturing cost of Cu(In,Ga)Se-2 (CIGS) thin-film solar cells is to use flexible polymer substrates instead of rigid glass. Because such substrates require lower temperature during absorber deposition, the grain growth of the absorber layer can be hindered which leads to a lower cell performance. Partial compensation of this efficiency loss might be accomplished by growing the absorber in the presence of Sb, which is reported to promote grain growth. In this work CIGS solar cells, deposited on glass substrates, at a reduced substrate temperature with a thin Sb layer (7, 12 nm) on top of the Mo contact are investigated. The diffusion profile of Sb is measured with plasma profiling time of flight mass spectrometry. The beneficial effect of Sb on efficiency and grain size is shown in quantum efficiency measurements and with scanning electron microscopy, respectively. Electric spectroscopy is used to explore the possible effects on the defect structure, more in particular on the dominant shallow acceptor. Admittance spectra exhibit a capacitance step to the geometric capacitance plateau at low temperature (5-60 K). Analyzing this capacitance step, we obtained a good estimate of the activation energy of the intrinsic defects that provide the p-type conductivity of the CIGS absorber. The measurements did not show a change in the nature of the dominant acceptor upon Sb treatment.},
  articleno    = {175104},
  author       = {Van Puyvelde, Lisanne and Lauwaert, Johan and Tempez, A and Devulder, Wouter and Nishiwaki, S and Pianezzi, F and Detavernier, Christophe and Tiwari, AN and Vrielinck, Henk},
  issn         = {0022-3727},
  journal      = {JOURNAL OF PHYSICS D-APPLIED PHYSICS},
  keyword      = {BULK,GROWTH,Sb layer,SPECTROSCOPY,Ga)Se2,Cu(ln,admittance spectroscopy,defects},
  language     = {eng},
  number       = {17},
  pages        = {7},
  publisher    = {IOP},
  title        = {Electronic defect study on low temperature processed Cu(In,Ga)Se2 thin-film solar cells and the influence of an Sb layer},
  url          = {http://dx.doi.org/10.1088/0022-3727/48/17/175104},
  volume       = {48},
  year         = {2015},
}

Chicago
Van Puyvelde, Lisanne, Johan Lauwaert, A Tempez, Wouter Devulder, S Nishiwaki, F Pianezzi, Christophe Detavernier, AN Tiwari, and Henk Vrielinck. 2015. “Electronic Defect Study on Low Temperature Processed Cu(In,Ga)Se2 Thin-film Solar Cells and the Influence of an Sb Layer.” Journal of Physics D-applied Physics 48 (17).
APA
Van Puyvelde, Lisanne, Lauwaert, J., Tempez, A., Devulder, W., Nishiwaki, S., Pianezzi, F., Detavernier, C., et al. (2015). Electronic defect study on low temperature processed Cu(In,Ga)Se2 thin-film solar cells and the influence of an Sb layer. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 48(17).
Vancouver
1.
Van Puyvelde L, Lauwaert J, Tempez A, Devulder W, Nishiwaki S, Pianezzi F, et al. Electronic defect study on low temperature processed Cu(In,Ga)Se2 thin-film solar cells and the influence of an Sb layer. JOURNAL OF PHYSICS D-APPLIED PHYSICS. IOP; 2015;48(17).
MLA
Van Puyvelde, Lisanne, Johan Lauwaert, A Tempez, et al. “Electronic Defect Study on Low Temperature Processed Cu(In,Ga)Se2 Thin-film Solar Cells and the Influence of an Sb Layer.” JOURNAL OF PHYSICS D-APPLIED PHYSICS 48.17 (2015): n. pag. Print.