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Electrically tuneable lateral leakage loss in liquid crystal clad shallow-etched silicon waveguides

(2015) OPTICS EXPRESS. 23(3). p.2846-2856
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Abstract
We demonstrate electrical tuning of the lateral leakage loss of TM-like modes in nematic liquid crystal (LC) clad shallow-etched Siliconon-Insulator (SOI) waveguides. The refractive index of the LC layer can be modulated by applying a voltage over it. This results in a modulation of the effective index of the SOI waveguide modes. Since the leakage loss is linked to these effective indices, tunable leakage loss of the waveguides is achieved. We switch the wavelength at which the minimum in leakage loss occurs by 39.5nm (from 1564nm to 1524.5nm) in a 785nm wide waveguide. We show that the leakage loss in this waveguide can either be increased or decreased by modulating the refractive index of the LC cladding at a fixed wavelength.
Keywords
Wavelength conversion devices, Liquid-crystal devices, TM-LIKE MODES, Waveguides, Optical interconnects, planar, Switching, PHOTONICS, Photonic integrated circuits

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Citation

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Chicago
Ako, Thomas, Anthony Hope, Thach Nguyen, Arnan Mitchell, Wim Bogaerts, Kristiaan Neyts, and Jeroen Beeckman. 2015. “Electrically Tuneable Lateral Leakage Loss in Liquid Crystal Clad Shallow-etched Silicon Waveguides.” Optics Express 23 (3): 2846–2856.
APA
Ako, T., Hope, A., Nguyen, T., Mitchell, A., Bogaerts, W., Neyts, K., & Beeckman, J. (2015). Electrically tuneable lateral leakage loss in liquid crystal clad shallow-etched silicon waveguides. OPTICS EXPRESS, 23(3), 2846–2856.
Vancouver
1.
Ako T, Hope A, Nguyen T, Mitchell A, Bogaerts W, Neyts K, et al. Electrically tuneable lateral leakage loss in liquid crystal clad shallow-etched silicon waveguides. OPTICS EXPRESS. 2015;23(3):2846–56.
MLA
Ako, Thomas, Anthony Hope, Thach Nguyen, et al. “Electrically Tuneable Lateral Leakage Loss in Liquid Crystal Clad Shallow-etched Silicon Waveguides.” OPTICS EXPRESS 23.3 (2015): 2846–2856. Print.
@article{5834739,
  abstract     = {We demonstrate electrical tuning of the lateral leakage loss of TM-like modes in nematic liquid crystal (LC) clad shallow-etched Siliconon-Insulator (SOI) waveguides. The refractive index of the LC layer can be
modulated by applying a voltage over it. This results in a modulation of the effective index of the SOI waveguide modes. Since the leakage loss is linked to these effective indices, tunable leakage loss of the waveguides is achieved. We switch the wavelength at which the minimum in leakage loss occurs by 39.5nm (from 1564nm to 1524.5nm) in a 785nm wide waveguide. We show that the leakage loss in this waveguide can either be increased or decreased by modulating the refractive index of the LC cladding at a fixed wavelength.},
  author       = {Ako, Thomas and Hope, Anthony and Nguyen, Thach  and Mitchell, Arnan and Bogaerts, Wim and Neyts, Kristiaan and Beeckman, Jeroen},
  issn         = {1094-4087},
  journal      = {OPTICS EXPRESS},
  keyword      = {Wavelength conversion devices,Liquid-crystal devices,TM-LIKE MODES,Waveguides,Optical interconnects,planar,Switching,PHOTONICS,Photonic integrated circuits},
  language     = {eng},
  number       = {3},
  pages        = {2846--2856},
  title        = {Electrically tuneable lateral leakage loss in liquid crystal clad shallow-etched silicon waveguides},
  url          = {http://dx.doi.org/10.1364/OE.23.002846},
  volume       = {23},
  year         = {2015},
}

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