Distinction between silicon and oxide traps using single-trap spectroscopy
- Author
- Wen Fang, Eddy Simoen (UGent) , Marc Aoulaiche, Jun Luo, Chao Zhao and Cor Claeys
- Organization
- Keywords
- defect spectroscopy, SIMULATION, VOLTAGE, VARIABILITY, MOSFETS, MOS-TRANSISTORS, UTBOX SOI NMOSFETS, generation recombination noise, Lorentzian spectrum, deep level parameters, RANDOM TELEGRAPH NOISE, LOW-FREQUENCY NOISE, GATE DIELECTRICS, GENERATION-RECOMBINATION NOISE
Downloads
-
(...).pdf
- full text
- |
- UGent only
- |
- |
- 2.61 MB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-5828227
- MLA
- Fang, Wen, Eddy Simoen, Marc Aoulaiche, et al. “Distinction Between Silicon and Oxide Traps Using Single-trap Spectroscopy.” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 212.3 (2015): 512–517. Print.
- APA
- Fang, W., Simoen, E., Aoulaiche, M., Luo, J., Zhao, C., & Claeys, C. (2015). Distinction between silicon and oxide traps using single-trap spectroscopy. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 212(3), 512–517.
- Chicago author-date
- Fang, Wen, Eddy Simoen, Marc Aoulaiche, Jun Luo, Chao Zhao, and Cor Claeys. 2015. “Distinction Between Silicon and Oxide Traps Using Single-trap Spectroscopy.” Physica Status Solidi A-applications and Materials Science 212 (3): 512–517.
- Chicago author-date (all authors)
- Fang, Wen, Eddy Simoen, Marc Aoulaiche, Jun Luo, Chao Zhao, and Cor Claeys. 2015. “Distinction Between Silicon and Oxide Traps Using Single-trap Spectroscopy.” Physica Status Solidi A-applications and Materials Science 212 (3): 512–517.
- Vancouver
- 1.Fang W, Simoen E, Aoulaiche M, Luo J, Zhao C, Claeys C. Distinction between silicon and oxide traps using single-trap spectroscopy. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2015;212(3):512–7.
- IEEE
- [1]W. Fang, E. Simoen, M. Aoulaiche, J. Luo, C. Zhao, and C. Claeys, “Distinction between silicon and oxide traps using single-trap spectroscopy,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 212, no. 3, pp. 512–517, 2015.
@article{5828227,
author = {Fang, Wen and Simoen, Eddy and Aoulaiche, Marc and Luo, Jun and Zhao, Chao and Claeys, Cor},
issn = {1862-6300},
journal = {PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE},
keywords = {defect spectroscopy,SIMULATION,VOLTAGE,VARIABILITY,MOSFETS,MOS-TRANSISTORS,UTBOX SOI NMOSFETS,generation recombination noise,Lorentzian spectrum,deep level parameters,RANDOM TELEGRAPH NOISE,LOW-FREQUENCY NOISE,GATE DIELECTRICS,GENERATION-RECOMBINATION NOISE},
language = {eng},
number = {3},
pages = {512--517},
title = {Distinction between silicon and oxide traps using single-trap spectroscopy},
url = {http://dx.doi.org/10.1002/pssa.201400087},
volume = {212},
year = {2015},
}
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: