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Distinction between silicon and oxide traps using single-trap spectroscopy

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defect spectroscopy, SIMULATION, VOLTAGE, VARIABILITY, MOSFETS, MOS-TRANSISTORS, UTBOX SOI NMOSFETS, generation recombination noise, Lorentzian spectrum, deep level parameters, RANDOM TELEGRAPH NOISE, LOW-FREQUENCY NOISE, GATE DIELECTRICS, GENERATION-RECOMBINATION NOISE

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MLA
Fang, Wen, Eddy Simoen, Marc Aoulaiche, et al. “Distinction Between Silicon and Oxide Traps Using Single-trap Spectroscopy.” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 212.3 (2015): 512–517. Print.
APA
Fang, W., Simoen, E., Aoulaiche, M., Luo, J., Zhao, C., & Claeys, C. (2015). Distinction between silicon and oxide traps using single-trap spectroscopy. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 212(3), 512–517.
Chicago author-date
Fang, Wen, Eddy Simoen, Marc Aoulaiche, Jun Luo, Chao Zhao, and Cor Claeys. 2015. “Distinction Between Silicon and Oxide Traps Using Single-trap Spectroscopy.” Physica Status Solidi A-applications and Materials Science 212 (3): 512–517.
Chicago author-date (all authors)
Fang, Wen, Eddy Simoen, Marc Aoulaiche, Jun Luo, Chao Zhao, and Cor Claeys. 2015. “Distinction Between Silicon and Oxide Traps Using Single-trap Spectroscopy.” Physica Status Solidi A-applications and Materials Science 212 (3): 512–517.
Vancouver
1.
Fang W, Simoen E, Aoulaiche M, Luo J, Zhao C, Claeys C. Distinction between silicon and oxide traps using single-trap spectroscopy. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2015;212(3):512–7.
IEEE
[1]
W. Fang, E. Simoen, M. Aoulaiche, J. Luo, C. Zhao, and C. Claeys, “Distinction between silicon and oxide traps using single-trap spectroscopy,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 212, no. 3, pp. 512–517, 2015.
@article{5828227,
  author       = {Fang, Wen and Simoen, Eddy and Aoulaiche, Marc and Luo, Jun and Zhao, Chao and Claeys, Cor},
  issn         = {1862-6300},
  journal      = {PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE},
  keywords     = {defect spectroscopy,SIMULATION,VOLTAGE,VARIABILITY,MOSFETS,MOS-TRANSISTORS,UTBOX SOI NMOSFETS,generation recombination noise,Lorentzian spectrum,deep level parameters,RANDOM TELEGRAPH NOISE,LOW-FREQUENCY NOISE,GATE DIELECTRICS,GENERATION-RECOMBINATION NOISE},
  language     = {eng},
  number       = {3},
  pages        = {512--517},
  title        = {Distinction between silicon and oxide traps using single-trap spectroscopy},
  url          = {http://dx.doi.org/10.1002/pssa.201400087},
  volume       = {212},
  year         = {2015},
}

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