Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs
- Author
- Eddy Simoen (UGent) , Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Sara dos Santos, Jun Luo, Chao Zhao, Joao Antonio Martino and Cor Claeys
- Organization
- Keywords
- deep-level parameters, defect spectroscopy, Generation Recombination noise, Lorentzian spectrum, MOSFETS, OXIDE TRAPS, DEFECTS, LOW-FREQUENCY-NOISE, RANDOM TELEGRAPH SIGNALS, SILICON, VARIABILITY
Downloads
-
(...).docx
- full text
- |
- UGent only
- |
- Word
- |
- 884.38 KB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-5814505
- MLA
- Simoen, Eddy, Bogdan Cretu, Wen Fang, et al. “Towards Single-trap Spectroscopy: Generation-recombination Noise in UTBOX SOI nMOSFETs.” Physica Status Solidi C-Current Topics in Solid State Physics. Vol. 12. Weinheim, Germany: Wiley-VCH, 2015. 292–298. Print.
- APA
- Simoen, Eddy, Cretu, B., Fang, W., Aoulaiche, M., Routoure, J.-M., Carin, R., dos Santos, S., et al. (2015). Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs. Physica Status Solidi C-Current Topics in Solid State Physics (Vol. 12, pp. 292–298). Presented at the E-MRS 2014 Spring meeting, Weinheim, Germany: Wiley-VCH.
- Chicago author-date
- Simoen, Eddy, Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Sara dos Santos, et al. 2015. “Towards Single-trap Spectroscopy: Generation-recombination Noise in UTBOX SOI nMOSFETs.” In Physica Status Solidi C-Current Topics in Solid State Physics, 12:292–298. Weinheim, Germany: Wiley-VCH.
- Chicago author-date (all authors)
- Simoen, Eddy, Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Sara dos Santos, Jun Luo, Chao Zhao, Joao Antonio Martino, and Cor Claeys. 2015. “Towards Single-trap Spectroscopy: Generation-recombination Noise in UTBOX SOI nMOSFETs.” In Physica Status Solidi C-Current Topics in Solid State Physics, 12:292–298. Weinheim, Germany: Wiley-VCH.
- Vancouver
- 1.Simoen E, Cretu B, Fang W, Aoulaiche M, Routoure J-M, Carin R, et al. Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs. Physica Status Solidi C-Current Topics in Solid State Physics. Weinheim, Germany: Wiley-VCH; 2015. p. 292–8.
- IEEE
- [1]E. Simoen et al., “Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs,” in Physica Status Solidi C-Current Topics in Solid State Physics, Lille, France, 2015, vol. 12, no. 3, pp. 292–298.
@inproceedings{5814505,
author = {Simoen, Eddy and Cretu, Bogdan and Fang, Wen and Aoulaiche, Marc and Routoure, Jean-Marc and Carin, Regis and dos Santos, Sara and Luo, Jun and Zhao, Chao and Martino, Joao Antonio and Claeys, Cor},
booktitle = {Physica Status Solidi C-Current Topics in Solid State Physics},
issn = {1862-6351},
keywords = {deep-level parameters,defect spectroscopy,Generation Recombination noise,Lorentzian spectrum,MOSFETS,OXIDE TRAPS,DEFECTS,LOW-FREQUENCY-NOISE,RANDOM TELEGRAPH SIGNALS,SILICON,VARIABILITY},
language = {eng},
location = {Lille, France},
number = {3},
pages = {292--298},
publisher = {Wiley-VCH},
title = {Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs},
url = {http://dx.doi.org/10.1002/pssc.201400075},
volume = {12},
year = {2015},
}
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: