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Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs

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deep-level parameters, defect spectroscopy, Generation Recombination noise, Lorentzian spectrum, MOSFETS, OXIDE TRAPS, DEFECTS, LOW-FREQUENCY-NOISE, RANDOM TELEGRAPH SIGNALS, SILICON, VARIABILITY

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Citation

Please use this url to cite or link to this publication:

MLA
Simoen, Eddy, Bogdan Cretu, Wen Fang, et al. “Towards Single-trap Spectroscopy: Generation-recombination Noise in UTBOX SOI nMOSFETs.” Physica Status Solidi C-Current Topics in Solid State Physics. Vol. 12. Weinheim, Germany: Wiley-VCH, 2015. 292–298. Print.
APA
Simoen, Eddy, Cretu, B., Fang, W., Aoulaiche, M., Routoure, J.-M., Carin, R., dos Santos, S., et al. (2015). Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs. Physica Status Solidi C-Current Topics in Solid State Physics (Vol. 12, pp. 292–298). Presented at the E-MRS 2014 Spring meeting, Weinheim, Germany: Wiley-VCH.
Chicago author-date
Simoen, Eddy, Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Sara dos Santos, et al. 2015. “Towards Single-trap Spectroscopy: Generation-recombination Noise in UTBOX SOI nMOSFETs.” In Physica Status Solidi C-Current Topics in Solid State Physics, 12:292–298. Weinheim, Germany: Wiley-VCH.
Chicago author-date (all authors)
Simoen, Eddy, Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean-Marc Routoure, Regis Carin, Sara dos Santos, Jun Luo, Chao Zhao, Joao Antonio Martino, and Cor Claeys. 2015. “Towards Single-trap Spectroscopy: Generation-recombination Noise in UTBOX SOI nMOSFETs.” In Physica Status Solidi C-Current Topics in Solid State Physics, 12:292–298. Weinheim, Germany: Wiley-VCH.
Vancouver
1.
Simoen E, Cretu B, Fang W, Aoulaiche M, Routoure J-M, Carin R, et al. Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs. Physica Status Solidi C-Current Topics in Solid State Physics. Weinheim, Germany: Wiley-VCH; 2015. p. 292–8.
IEEE
[1]
E. Simoen et al., “Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs,” in Physica Status Solidi C-Current Topics in Solid State Physics, Lille, France, 2015, vol. 12, no. 3, pp. 292–298.
@inproceedings{5814505,
  author       = {Simoen, Eddy and Cretu, Bogdan and Fang, Wen and Aoulaiche, Marc and Routoure, Jean-Marc and Carin, Regis and dos Santos, Sara and Luo, Jun and Zhao, Chao and Martino, Joao Antonio and Claeys, Cor},
  booktitle    = {Physica Status Solidi C-Current Topics in Solid State Physics},
  issn         = {1862-6351},
  keywords     = {deep-level parameters,defect spectroscopy,Generation Recombination noise,Lorentzian spectrum,MOSFETS,OXIDE TRAPS,DEFECTS,LOW-FREQUENCY-NOISE,RANDOM TELEGRAPH SIGNALS,SILICON,VARIABILITY},
  language     = {eng},
  location     = {Lille, France},
  number       = {3},
  pages        = {292--298},
  publisher    = {Wiley-VCH},
  title        = {Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs},
  url          = {http://dx.doi.org/10.1002/pssc.201400075},
  volume       = {12},
  year         = {2015},
}

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