Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications
- Author
- Eddy Simoen (UGent) , V Ferro and BJ O'Sullivan
- Organization
- Keywords
- ELECTRON-SPIN-RESONANCE, HYDROGENATED AMORPHOUS-SILICON, INTERFACE STATES, GAP-STATES, METAL/INSULATOR/SEMICONDUCTOR STRUCTURES, TRAPS, CAPACITANCE, PHOTOCONDUCTIVITY, IDENTIFICATION, DENSITY
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-5814470
- MLA
- Simoen, Eddy, et al. “Deep-Level Transient Spectroscopy of Al/a-Si:H/c-Si Structures for Heterojunction Solar Cell Applications.” JOURNAL OF APPLIED PHYSICS, vol. 116, no. 23, 2014, doi:10.1063/1.4904082.
- APA
- Simoen, E., Ferro, V., & O’Sullivan, B. (2014). Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications. JOURNAL OF APPLIED PHYSICS, 116(23). https://doi.org/10.1063/1.4904082
- Chicago author-date
- Simoen, Eddy, V Ferro, and BJ O’Sullivan. 2014. “Deep-Level Transient Spectroscopy of Al/a-Si:H/c-Si Structures for Heterojunction Solar Cell Applications.” JOURNAL OF APPLIED PHYSICS 116 (23). https://doi.org/10.1063/1.4904082.
- Chicago author-date (all authors)
- Simoen, Eddy, V Ferro, and BJ O’Sullivan. 2014. “Deep-Level Transient Spectroscopy of Al/a-Si:H/c-Si Structures for Heterojunction Solar Cell Applications.” JOURNAL OF APPLIED PHYSICS 116 (23). doi:10.1063/1.4904082.
- Vancouver
- 1.Simoen E, Ferro V, O’Sullivan B. Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications. JOURNAL OF APPLIED PHYSICS. 2014;116(23).
- IEEE
- [1]E. Simoen, V. Ferro, and B. O’Sullivan, “Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications,” JOURNAL OF APPLIED PHYSICS, vol. 116, no. 23, 2014.
@article{5814470, articleno = {{234501}}, author = {{Simoen, Eddy and Ferro, V and O'Sullivan, BJ}}, issn = {{0021-8979}}, journal = {{JOURNAL OF APPLIED PHYSICS}}, keywords = {{ELECTRON-SPIN-RESONANCE,HYDROGENATED AMORPHOUS-SILICON,INTERFACE STATES,GAP-STATES,METAL/INSULATOR/SEMICONDUCTOR STRUCTURES,TRAPS,CAPACITANCE,PHOTOCONDUCTIVITY,IDENTIFICATION,DENSITY}}, language = {{eng}}, number = {{23}}, pages = {{8}}, title = {{Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications}}, url = {{http://doi.org/10.1063/1.4904082}}, volume = {{116}}, year = {{2014}}, }
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