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Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge

Siegfried Segers (UGent) , Johan Lauwaert (UGent) , Paul Clauws (UGent) , Eddy Simoen (UGent) , Jan Vanhellemont (UGent) , Freddy Callens (UGent) and Henk Vrielinck (UGent)
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G.0207.10N FWO
Abstract
Quenching experiments have been performed on both n- and p-type Ge in a dedicated furnace using infrared lamp heating. The capture and emission characteristics of the induced deep-level defects in the quenched samples were investigated by means of deep level transient spectroscopy. For all defect levels, a high impact of capture in the transition region (slow capture) was found. An empirical approach to analyse this effect is presented, which allows to extract reliable capture cross section parameters. The defect parameters thus obtained were compared with previously published data and it was found that some prominent quench-inginduced deep levels are related to metal impurities (Cu and Ni), while others may be vacancy-related.
Keywords
COPPER, DIFFUSION, ACCEPTORS, TRAPS, IRRADIATION-INDUCED DEFECTS, N-TYPE GERMANIUM, IMPURITIES, DLTS, SOLUBILITY, TRANSIENT SPECTROSCOPY, germanium, defects, quenching, DLTS, slow capture, capture cross section

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Citation

Please use this url to cite or link to this publication:

Chicago
Segers, Siegfried, Johan Lauwaert, Paul Clauws, Eddy Simoen, Jan Vanhellemont, Freddy Callens, and Henk Vrielinck. 2014. “Direct Estimation of Capture Cross Sections in the Presence of Slow Capture: Application to the Identification of Quenched-in Deeplevel Defects in Ge.” Semiconductor Science and Technology 29 (12).
APA
Segers, Siegfried, Lauwaert, J., Clauws, P., Simoen, E., Vanhellemont, J., Callens, F., & Vrielinck, H. (2014). Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29(12).
Vancouver
1.
Segers S, Lauwaert J, Clauws P, Simoen E, Vanhellemont J, Callens F, et al. Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2014;29(12).
MLA
Segers, Siegfried, Johan Lauwaert, Paul Clauws, et al. “Direct Estimation of Capture Cross Sections in the Presence of Slow Capture: Application to the Identification of Quenched-in Deeplevel Defects in Ge.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 29.12 (2014): n. pag. Print.
@article{5808829,
  abstract     = {Quenching experiments have been performed on both n- and p-type Ge in a dedicated furnace using infrared lamp heating. The capture and emission characteristics of the induced deep-level defects in the quenched samples were investigated by means of deep level transient
spectroscopy. For all defect levels, a high impact of capture in the transition region (slow capture) was found. An empirical approach to analyse this effect is presented, which allows to extract reliable capture cross section parameters. The defect parameters thus obtained were
compared with previously published data and it was found that some prominent quench-inginduced deep levels are related to metal impurities (Cu and Ni), while others may be vacancy-related.},
  articleno    = {125007},
  author       = {Segers, Siegfried and Lauwaert, Johan and Clauws, Paul and Simoen, Eddy and Vanhellemont, Jan and Callens, Freddy and Vrielinck, Henk},
  issn         = {0268-1242},
  journal      = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  language     = {eng},
  number       = {12},
  pages        = {9},
  title        = {Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge},
  url          = {http://dx.doi.org/10.1088/0268-1242/29/12/125007},
  volume       = {29},
  year         = {2014},
}

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