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Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 nm Wavelength

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Center for nano- and biophotonics (NB-Photonics)
Abstract
Low temperature PECVD silicon nitride photonic waveguides have been fabricated by both electron beam lithography and 200 mm DUV lithography. Propagation losses and bend losses were both measured at 532 and 900 nm wavelength, revealing sub 1dB/cm propagation losses for cladded waveguides at both wavelengths for single mode operation. Without cladding, propagation losses were measured to be in the 1-3 dB range for 532 nm and remain below 1 dB/cm for 900 nm for single mode waveguides. Bend losses were measured for 532 nm and were well below 0.1 dB per 90 degree bend for radii larger than 10 mu m.
Keywords
Photonic waveguides, Silicon nitride, PECVD, Ring resonators, propagation losses, bend losses

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Citation

Please use this url to cite or link to this publication:

Chicago
Neutens, P, Ananth Subramanian, M Ul Hasan, C Chen, R Jansen, Tom Claes, X Rottenberg, et al. 2014. “Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 Nm Wavelength.” In Proceedings of the Society of Photo-optical Instrumentation Engineers (spie), ed. L Vivien, S Honkanen, L Pavesi, and S Pelli. Vol. 9133. SPIE.
APA
Neutens, P., Subramanian, A., Hasan, M. U., Chen, C., Jansen, R., Claes, T., Rottenberg, X., et al. (2014). Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 nm Wavelength. In L Vivien, S. Honkanen, L. Pavesi, & S. Pelli (Eds.), PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) (Vol. 9133). Presented at the 4th Conference on Silicon Photonics and Photonic Integrated Circuits, SPIE.
Vancouver
1.
Neutens P, Subramanian A, Hasan MU, Chen C, Jansen R, Claes T, et al. Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 nm Wavelength. In: Vivien L, Honkanen S, Pavesi L, Pelli S, editors. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE). SPIE; 2014.
MLA
Neutens, P, Ananth Subramanian, M Ul Hasan, et al. “Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 Nm Wavelength.” Proceedings of the Society of Photo-optical Instrumentation Engineers (spie). Ed. L Vivien et al. Vol. 9133. SPIE, 2014. Print.
@inproceedings{5756548,
  abstract     = {Low temperature PECVD silicon nitride photonic waveguides have been fabricated by both electron beam lithography and 200 mm DUV lithography. Propagation losses and bend losses were both measured at 532 and 900 nm wavelength, revealing sub 1dB/cm propagation losses for cladded waveguides at both wavelengths for single mode operation. Without cladding, propagation losses were measured to be in the 1-3 dB range for 532 nm and remain below 1 dB/cm for 900 nm for single mode waveguides. Bend losses were measured for 532 nm and were well below 0.1 dB per 90 degree bend for radii larger than 10 mu m.},
  articleno    = {91331F},
  author       = {Neutens, P and Subramanian, Ananth and Hasan, M Ul and Chen, C and Jansen, R and Claes, Tom and Rottenberg, X and Du Bois, B and Leyssens, K and Helin, P and Severi, S and Dhakal, Ashim and Peyskens, Fr{\'e}d{\'e}ric and Lagae, L and Deshpande, P and Baets, Roel and Van Dorpe, P},
  booktitle    = {PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)},
  editor       = {Vivien, L and Honkanen, S and Pavesi, L and Pelli, S},
  isbn         = {9781628410815},
  issn         = {0277-786X},
  language     = {eng},
  location     = {Brussels, Belgium},
  pages        = {6},
  publisher    = {SPIE},
  title        = {Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 nm Wavelength},
  url          = {http://dx.doi.org/10.1117/12.2052119},
  volume       = {9133},
  year         = {2014},
}

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