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Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 nm Wavelength

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Center for nano- and biophotonics (NB-Photonics)
Abstract
Low temperature PECVD silicon nitride photonic waveguides have been fabricated by both electron beam lithography and 200 mm DUV lithography. Propagation losses and bend losses were both measured at 532 and 900 nm wavelength, revealing sub 1dB/cm propagation losses for cladded waveguides at both wavelengths for single mode operation. Without cladding, propagation losses were measured to be in the 1-3 dB range for 532 nm and remain below 1 dB/cm for 900 nm for single mode waveguides. Bend losses were measured for 532 nm and were well below 0.1 dB per 90 degree bend for radii larger than 10 mu m.
Keywords
Photonic waveguides, Silicon nitride, PECVD, Ring resonators, propagation losses, bend losses

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Citation

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MLA
Neutens, P et al. “Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 Nm Wavelength.” Proceedings of the Society of Photo-optical Instrumentation Engineers (spie). Ed. L Vivien et al. Vol. 9133. SPIE, 2014. Print.
APA
Neutens, P., Subramanian, A., Hasan, M. U., Chen, C., Jansen, R., Claes, T., Rottenberg, X., et al. (2014). Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 nm Wavelength. In L. Vivien, S. Honkanen, L. Pavesi, & S. Pelli (Eds.), PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) (Vol. 9133). Presented at the 4th Conference on Silicon Photonics and Photonic Integrated Circuits, SPIE.
Chicago author-date
Neutens, P, Ananth Subramanian, M Ul Hasan, C Chen, R Jansen, Tom Claes, X Rottenberg, et al. 2014. “Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 Nm Wavelength.” In Proceedings of the Society of Photo-optical Instrumentation Engineers (spie), ed. L Vivien, S Honkanen, L Pavesi, and S Pelli. Vol. 9133. SPIE.
Chicago author-date (all authors)
Neutens, P, Ananth Subramanian, M Ul Hasan, C Chen, R Jansen, Tom Claes, X Rottenberg, B Du Bois, K Leyssens, P Helin, S Severi, Ashim Dhakal, Frédéric Peyskens, L Lagae, P Deshpande, Roel Baets, and P Van Dorpe. 2014. “Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 Nm Wavelength.” In Proceedings of the Society of Photo-optical Instrumentation Engineers (spie), ed. L Vivien, S Honkanen, L Pavesi, and S Pelli. Vol. 9133. SPIE.
Vancouver
1.
Neutens P, Subramanian A, Hasan MU, Chen C, Jansen R, Claes T, et al. Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 nm Wavelength. In: Vivien L, Honkanen S, Pavesi L, Pelli S, editors. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE). SPIE; 2014.
IEEE
[1]
P. Neutens et al., “Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 nm Wavelength,” in PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Brussels, Belgium, 2014, vol. 9133.
@inproceedings{5756548,
  abstract     = {Low temperature PECVD silicon nitride photonic waveguides have been fabricated by both electron beam lithography and 200 mm DUV lithography. Propagation losses and bend losses were both measured at 532 and 900 nm wavelength, revealing sub 1dB/cm propagation losses for cladded waveguides at both wavelengths for single mode operation. Without cladding, propagation losses were measured to be in the 1-3 dB range for 532 nm and remain below 1 dB/cm for 900 nm for single mode waveguides. Bend losses were measured for 532 nm and were well below 0.1 dB per 90 degree bend for radii larger than 10 mu m.},
  articleno    = {91331F},
  author       = {Neutens, P and Subramanian, Ananth and Hasan, M Ul and Chen, C and Jansen, R and Claes, Tom and Rottenberg, X and Du Bois, B and Leyssens, K and Helin, P and Severi, S and Dhakal, Ashim and Peyskens, Frédéric and Lagae, L and Deshpande, P and Baets, Roel and Van Dorpe, P},
  booktitle    = {PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)},
  editor       = {Vivien, L and Honkanen, S and Pavesi, L and Pelli, S},
  isbn         = {9781628410815},
  issn         = {0277-786X},
  keywords     = {Photonic waveguides,Silicon nitride,PECVD,Ring resonators,propagation losses,bend losses},
  language     = {eng},
  location     = {Brussels, Belgium},
  pages        = {6},
  publisher    = {SPIE},
  title        = {Characterization of PECVD Silicon Nitride Photonic Components at 532 and 900 nm Wavelength},
  url          = {http://dx.doi.org/10.1117/12.2052119},
  volume       = {9133},
  year         = {2014},
}

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