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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

(2015) SOLID-STATE ELECTRONICS. 103. p.127-130
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Keywords
TRANSISTORS, RELIABILITY, AlGaN/GaN, MIS-HEMT, Slow traps, Reliability

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Citation

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MLA
Wu, Tian-Li, Denis Marcon, Nicolo Ronchi, et al. “Analysis of Slow De-trapping Phenomena After a Positive Gate Bias on AlGaN/GaN MIS-HEMTs with In-situ Si3N4/Al2O3 Bilayer Gate Dielectrics.” SOLID-STATE ELECTRONICS 103 (2015): 127–130. Print.
APA
Wu, T.-L., Marcon, D., Ronchi, N., Bakeroot, B., You, S., Stoffels, S., Van Hove, M., et al. (2015). Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. SOLID-STATE ELECTRONICS, 103, 127–130.
Chicago author-date
Wu, Tian-Li, Denis Marcon, Nicolo Ronchi, Benoit Bakeroot, Shuzhen You, Steve Stoffels, Marleen Van Hove, Davide Bisi, Matteo Meneghini, and Guido Groeseneken. 2015. “Analysis of Slow De-trapping Phenomena After a Positive Gate Bias on AlGaN/GaN MIS-HEMTs with In-situ Si3N4/Al2O3 Bilayer Gate Dielectrics.” Solid-state Electronics 103: 127–130.
Chicago author-date (all authors)
Wu, Tian-Li, Denis Marcon, Nicolo Ronchi, Benoit Bakeroot, Shuzhen You, Steve Stoffels, Marleen Van Hove, Davide Bisi, Matteo Meneghini, and Guido Groeseneken. 2015. “Analysis of Slow De-trapping Phenomena After a Positive Gate Bias on AlGaN/GaN MIS-HEMTs with In-situ Si3N4/Al2O3 Bilayer Gate Dielectrics.” Solid-state Electronics 103: 127–130.
Vancouver
1.
Wu T-L, Marcon D, Ronchi N, Bakeroot B, You S, Stoffels S, et al. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. SOLID-STATE ELECTRONICS. 2015;103:127–30.
IEEE
[1]
T.-L. Wu et al., “Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics,” SOLID-STATE ELECTRONICS, vol. 103, pp. 127–130, 2015.
@article{5746094,
  author       = {Wu, Tian-Li and Marcon, Denis and Ronchi, Nicolo and Bakeroot, Benoit and You, Shuzhen and Stoffels, Steve and Van Hove, Marleen and Bisi, Davide and Meneghini, Matteo and Groeseneken, Guido},
  issn         = {0038-1101},
  journal      = {SOLID-STATE ELECTRONICS},
  keywords     = {TRANSISTORS,RELIABILITY,AlGaN/GaN,MIS-HEMT,Slow traps,Reliability},
  language     = {eng},
  pages        = {127--130},
  title        = {Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics},
  url          = {http://dx.doi.org/10.1016/j.sse.2014.08.006},
  volume       = {103},
  year         = {2015},
}

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