Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes
- Author
- Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot (UGent) , Guido Groeseneken and Stefaan Decoutere
- Organization
- Keywords
- IMPACT, SURFACE-STATES, TRAPS, GaN, Schottky Barrier Diode (SBD), Pulsed I-V, Current collapse, TCAD simulation, Trapping/de-trapping
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-5746070
- MLA
- Hu, Jie, et al. “Physical Origin of Current Collapse in Au-Free AlGaN/GaN Schottky Barrier Diodes.” MICROELECTRONICS RELIABILITY, vol. 54, no. 9–10, Pergamon, 2014, pp. 2196–99, doi:10.1016/j.microrel.2014.07.031.
- APA
- Hu, J., Stoffels, S., Lenci, S., Ronchi, N., Venegas, R., You, S., … Decoutere, S. (2014). Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. MICROELECTRONICS RELIABILITY, 54(9–10), 2196–2199. https://doi.org/10.1016/j.microrel.2014.07.031
- Chicago author-date
- Hu, Jie, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, and Stefaan Decoutere. 2014. “Physical Origin of Current Collapse in Au-Free AlGaN/GaN Schottky Barrier Diodes.” MICROELECTRONICS RELIABILITY 54 (9–10): 2196–99. https://doi.org/10.1016/j.microrel.2014.07.031.
- Chicago author-date (all authors)
- Hu, Jie, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, and Stefaan Decoutere. 2014. “Physical Origin of Current Collapse in Au-Free AlGaN/GaN Schottky Barrier Diodes.” MICROELECTRONICS RELIABILITY 54 (9–10): 2196–2199. doi:10.1016/j.microrel.2014.07.031.
- Vancouver
- 1.Hu J, Stoffels S, Lenci S, Ronchi N, Venegas R, You S, et al. Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. MICROELECTRONICS RELIABILITY. 2014;54(9–10):2196–9.
- IEEE
- [1]J. Hu et al., “Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes,” MICROELECTRONICS RELIABILITY, vol. 54, no. 9–10, pp. 2196–2199, 2014.
@article{5746070,
author = {{Hu, Jie and Stoffels, Steve and Lenci, Silvia and Ronchi, Nicolo and Venegas, Rafael and You, Shuzhen and Bakeroot, Benoit and Groeseneken, Guido and Decoutere, Stefaan}},
issn = {{0026-2714}},
journal = {{MICROELECTRONICS RELIABILITY}},
keywords = {{IMPACT,SURFACE-STATES,TRAPS,GaN,Schottky Barrier Diode (SBD),Pulsed I-V,Current collapse,TCAD simulation,Trapping/de-trapping}},
language = {{eng}},
number = {{9-10}},
pages = {{2196--2199}},
publisher = {{Pergamon}},
title = {{Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes}},
url = {{http://dx.doi.org/10.1016/j.microrel.2014.07.031}},
volume = {{54}},
year = {{2014}},
}
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