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Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

(2014) MICROELECTRONICS RELIABILITY. 54(9-10). p.2196-2199
Author
Organization
Keywords
IMPACT, SURFACE-STATES, TRAPS, GaN, Schottky Barrier Diode (SBD), Pulsed I-V, Current collapse, TCAD simulation, Trapping/de-trapping

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Citation

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MLA
Hu, Jie, et al. “Physical Origin of Current Collapse in Au-Free AlGaN/GaN Schottky Barrier Diodes.” MICROELECTRONICS RELIABILITY, vol. 54, no. 9–10, Pergamon, 2014, pp. 2196–99, doi:10.1016/j.microrel.2014.07.031.
APA
Hu, J., Stoffels, S., Lenci, S., Ronchi, N., Venegas, R., You, S., … Decoutere, S. (2014). Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. MICROELECTRONICS RELIABILITY, 54(9–10), 2196–2199. https://doi.org/10.1016/j.microrel.2014.07.031
Chicago author-date
Hu, Jie, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, and Stefaan Decoutere. 2014. “Physical Origin of Current Collapse in Au-Free AlGaN/GaN Schottky Barrier Diodes.” MICROELECTRONICS RELIABILITY 54 (9–10): 2196–99. https://doi.org/10.1016/j.microrel.2014.07.031.
Chicago author-date (all authors)
Hu, Jie, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, and Stefaan Decoutere. 2014. “Physical Origin of Current Collapse in Au-Free AlGaN/GaN Schottky Barrier Diodes.” MICROELECTRONICS RELIABILITY 54 (9–10): 2196–2199. doi:10.1016/j.microrel.2014.07.031.
Vancouver
1.
Hu J, Stoffels S, Lenci S, Ronchi N, Venegas R, You S, et al. Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. MICROELECTRONICS RELIABILITY. 2014;54(9–10):2196–9.
IEEE
[1]
J. Hu et al., “Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes,” MICROELECTRONICS RELIABILITY, vol. 54, no. 9–10, pp. 2196–2199, 2014.
@article{5746070,
  author       = {{Hu, Jie and Stoffels, Steve and Lenci, Silvia and Ronchi, Nicolo and Venegas, Rafael and You, Shuzhen and Bakeroot, Benoit and Groeseneken, Guido and Decoutere, Stefaan}},
  issn         = {{0026-2714}},
  journal      = {{MICROELECTRONICS RELIABILITY}},
  keywords     = {{IMPACT,SURFACE-STATES,TRAPS,GaN,Schottky Barrier Diode (SBD),Pulsed I-V,Current collapse,TCAD simulation,Trapping/de-trapping}},
  language     = {{eng}},
  number       = {{9-10}},
  pages        = {{2196--2199}},
  publisher    = {{Pergamon}},
  title        = {{Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes}},
  url          = {{http://doi.org/10.1016/j.microrel.2014.07.031}},
  volume       = {{54}},
  year         = {{2014}},
}

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