Advanced search
1 file | 304.99 KB

Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon

Author
Organization
Keywords
Si p-n junction, ion implantation, annealing, depth profile, oxygen, arsenic, antimony, gettering, DIFFUSION, SI, PRECIPITATION, MECHANISMS, DEFECTS, SHALLOW

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 304.99 KB

Citation

Please use this url to cite or link to this publication:

Chicago
Oberemok, O, V Kladko, V Litovchenko, B Romanyuk, V Popov, V Melnik, and Jan Vanhellemont. 2014. “Oxygen Gettering in Low-energy Arsenic or Antimony Ion Implanted Cz-silicon.” In Physica Status Solidi C-Current Topics in Solid State Physics, ed. S Pizzini and G Kissinger, 11:1634–1639. Weinheim, Germany: Wiley-VCH.
APA
Oberemok, O., Kladko, V., Litovchenko, V., Romanyuk, B., Popov, V., Melnik, V., & Vanhellemont, J. (2014). Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon. In S. Pizzini & G. Kissinger (Eds.), Physica Status Solidi C-Current Topics in Solid State Physics (Vol. 11, pp. 1634–1639). Presented at the European Materials Research Society Spring meeting ; Symposium X on Materials Research for Group IV Semiconductors : Growth, Characterization, and Technological Developments, Weinheim, Germany: Wiley-VCH.
Vancouver
1.
Oberemok O, Kladko V, Litovchenko V, Romanyuk B, Popov V, Melnik V, et al. Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon. In: Pizzini S, Kissinger G, editors. Physica Status Solidi C-Current Topics in Solid State Physics. Weinheim, Germany: Wiley-VCH; 2014. p. 1634–9.
MLA
Oberemok, O, V Kladko, V Litovchenko, et al. “Oxygen Gettering in Low-energy Arsenic or Antimony Ion Implanted Cz-silicon.” Physica Status Solidi C-Current Topics in Solid State Physics. Ed. S Pizzini & G Kissinger. Vol. 11. Weinheim, Germany: Wiley-VCH, 2014. 1634–1639. Print.
@inproceedings{5737794,
  author       = {Oberemok, O and Kladko, V and Litovchenko, V and Romanyuk, B and Popov, V and Melnik, V and Vanhellemont, Jan},
  booktitle    = {Physica Status Solidi C-Current Topics in Solid State Physics},
  editor       = {Pizzini, S and Kissinger, G},
  issn         = {1862-6351},
  keyword      = {Si p-n junction,ion implantation,annealing,depth profile,oxygen,arsenic,antimony,gettering,DIFFUSION,SI,PRECIPITATION,MECHANISMS,DEFECTS,SHALLOW},
  language     = {eng},
  location     = {Lille, France},
  number       = {11-12},
  pages        = {1634--1639},
  publisher    = {Wiley-VCH},
  title        = {Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon},
  url          = {http://dx.doi.org/10.1002/pssc.201431562},
  volume       = {11},
  year         = {2014},
}

Altmetric
View in Altmetric
Web of Science
Times cited: