Ghent University Academic Bibliography

Advanced

Control of intrinsic point defects in single crystal silicon and germanium growth from a melt

Jan Vanhellemont UGent, E Kamiyama, K Nakamura and K Sueoka (2014) The 7th Forum on the Science and Technology of Silicon Materials 2014. p.223-236
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
The 7th Forum on the Science and Technology of Silicon Materials 2014
editor
Y Yoshida and H Yamada-Kaneta
pages
223 - 236
conference name
7th Forum on the Science and Technology of Silicon Materials
conference location
Hamamatsu, Japan
conference start
2014-10-19
conference end
2014-10-22
language
English
UGent publication?
yes
classification
C1
copyright statement
I have retained and own the full copyright for this publication
id
5737732
handle
http://hdl.handle.net/1854/LU-5737732
date created
2014-10-26 07:31:32
date last changed
2016-12-19 15:37:47
@inproceedings{5737732,
  author       = {Vanhellemont, Jan and Kamiyama, E and Nakamura, K and Sueoka, K},
  booktitle    = {The 7th Forum on the Science and Technology of Silicon Materials 2014},
  editor       = {Yoshida, Y and Yamada-Kaneta, H},
  language     = {eng},
  location     = {Hamamatsu, Japan},
  pages        = {223--236},
  title        = {Control of intrinsic point defects in single crystal silicon and germanium growth from a melt},
  year         = {2014},
}

Chicago
Vanhellemont, Jan, E Kamiyama, K Nakamura, and K Sueoka. 2014. “Control of Intrinsic Point Defects in Single Crystal Silicon and Germanium Growth from a Melt.” In The 7th Forum on the Science and Technology of Silicon Materials 2014, ed. Y Yoshida and H Yamada-Kaneta, 223–236.
APA
Vanhellemont, J., Kamiyama, E., Nakamura, K., & Sueoka, K. (2014). Control of intrinsic point defects in single crystal silicon and germanium growth from a melt. In Y Yoshida & H. Yamada-Kaneta (Eds.), The 7th Forum on the Science and Technology of Silicon Materials 2014 (pp. 223–236). Presented at the 7th Forum on the Science and Technology of Silicon Materials.
Vancouver
1.
Vanhellemont J, Kamiyama E, Nakamura K, Sueoka K. Control of intrinsic point defects in single crystal silicon and germanium growth from a melt. In: Yoshida Y, Yamada-Kaneta H, editors. The 7th Forum on the Science and Technology of Silicon Materials 2014. 2014. p. 223–36.
MLA
Vanhellemont, Jan, E Kamiyama, K Nakamura, et al. “Control of Intrinsic Point Defects in Single Crystal Silicon and Germanium Growth from a Melt.” The 7th Forum on the Science and Technology of Silicon Materials 2014. Ed. Y Yoshida & H Yamada-Kaneta. 2014. 223–236. Print.