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Control of intrinsic point defects in single crystal silicon and germanium growth from a melt

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Chicago
Vanhellemont, Jan, E Kamiyama, K Nakamura, and K Sueoka. 2014. “Control of Intrinsic Point Defects in Single Crystal Silicon and Germanium Growth from a Melt.” In The 7th Forum on the Science and Technology of Silicon Materials 2014, ed. Y Yoshida and H Yamada-Kaneta, 223–236.
APA
Vanhellemont, J., Kamiyama, E., Nakamura, K., & Sueoka, K. (2014). Control of intrinsic point defects in single crystal silicon and germanium growth from a melt. In Y Yoshida & H. Yamada-Kaneta (Eds.), The 7th Forum on the Science and Technology of Silicon Materials 2014 (pp. 223–236). Presented at the 7th Forum on the Science and Technology of Silicon Materials.
Vancouver
1.
Vanhellemont J, Kamiyama E, Nakamura K, Sueoka K. Control of intrinsic point defects in single crystal silicon and germanium growth from a melt. In: Yoshida Y, Yamada-Kaneta H, editors. The 7th Forum on the Science and Technology of Silicon Materials 2014. 2014. p. 223–36.
MLA
Vanhellemont, Jan, E Kamiyama, K Nakamura, et al. “Control of Intrinsic Point Defects in Single Crystal Silicon and Germanium Growth from a Melt.” The 7th Forum on the Science and Technology of Silicon Materials 2014. Ed. Y Yoshida & H Yamada-Kaneta. 2014. 223–236. Print.
@inproceedings{5737732,
  author       = {Vanhellemont, Jan and Kamiyama, E and Nakamura, K and Sueoka, K},
  booktitle    = {The 7th Forum on the Science and Technology of Silicon Materials 2014},
  editor       = {Yoshida, Y and Yamada-Kaneta, H},
  language     = {eng},
  location     = {Hamamatsu, Japan},
  pages        = {223--236},
  title        = {Control of intrinsic point defects in single crystal silicon and germanium growth from a melt},
  year         = {2014},
}