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Phase formation in intermixed Ni-Ge thin films: influence of Ge content and low-temperature nucleation of hexagonal nickel germanides

(2014) MICROELECTRONIC ENGINEERING. 120. p.168-173
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Keywords
Thin film, Germanium, Germanides, In situ XRD, Phase formation, Nickel

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Citation

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MLA
De Schutter, Bob, Wouter Devulder, A Schrauwen, et al. “Phase Formation in Intermixed Ni-Ge Thin Films: Influence of Ge Content and Low-temperature Nucleation of Hexagonal Nickel Germanides.” MICROELECTRONIC ENGINEERING 120 (2014): 168–173. Print.
APA
De Schutter, B., Devulder, W., Schrauwen, A., van Stiphout, K., Perkisas, T., Bals, S., Vantomme, A., et al. (2014). Phase formation in intermixed Ni-Ge thin films: influence of Ge content and low-temperature nucleation of hexagonal nickel germanides. MICROELECTRONIC ENGINEERING, 120, 168–173.
Chicago author-date
De Schutter, Bob, Wouter Devulder, A Schrauwen, K van Stiphout, T Perkisas, S Bals, A Vantomme, and Christophe Detavernier. 2014. “Phase Formation in Intermixed Ni-Ge Thin Films: Influence of Ge Content and Low-temperature Nucleation of Hexagonal Nickel Germanides.” Microelectronic Engineering 120: 168–173.
Chicago author-date (all authors)
De Schutter, Bob, Wouter Devulder, A Schrauwen, K van Stiphout, T Perkisas, S Bals, A Vantomme, and Christophe Detavernier. 2014. “Phase Formation in Intermixed Ni-Ge Thin Films: Influence of Ge Content and Low-temperature Nucleation of Hexagonal Nickel Germanides.” Microelectronic Engineering 120: 168–173.
Vancouver
1.
De Schutter B, Devulder W, Schrauwen A, van Stiphout K, Perkisas T, Bals S, et al. Phase formation in intermixed Ni-Ge thin films: influence of Ge content and low-temperature nucleation of hexagonal nickel germanides. MICROELECTRONIC ENGINEERING. 2014;120:168–73.
IEEE
[1]
B. De Schutter et al., “Phase formation in intermixed Ni-Ge thin films: influence of Ge content and low-temperature nucleation of hexagonal nickel germanides,” MICROELECTRONIC ENGINEERING, vol. 120, pp. 168–173, 2014.
@article{5647913,
  author       = {De Schutter, Bob and Devulder, Wouter and Schrauwen, A and van Stiphout, K and Perkisas, T and Bals, S and Vantomme, A and Detavernier, Christophe},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  keywords     = {Thin film,Germanium,Germanides,In situ XRD,Phase formation,Nickel},
  language     = {eng},
  pages        = {168--173},
  title        = {Phase formation in intermixed Ni-Ge thin films: influence of Ge content and low-temperature nucleation of hexagonal nickel germanides},
  url          = {http://dx.doi.org/10.1016/j.mee.2013.09.004},
  volume       = {120},
  year         = {2014},
}

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