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Modeling the conformality of atomic layer deposition: the effect of sticking probability

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Abstract
The key advantage of atomic layer deposition (ALD) is undoubtedly the excellent step coverage, which allows for conformal deposition of thin films in high-aspect-ratio structures. In this paper, a model is proposed to predict the deposited film thickness as a function of depth inside a hole. The main model parameters are the gas pressure, the deposition temperature, and the initial sticking probability of the precursor molecules. Earlier work by Gordon et al. assumed a sticking probability of 0/100% for molecules hitting a covered/uncovered section of the wall of the hole, thus resulting in a stepwise film-thickness profile. In this work, the sticking probability is related to the surface coverage theta by Langmuir’s equation s(theta) = s0(1−theta), whereby the initial sticking probability s0 is now an adjustable model parameter. For s0~=100%, the model predicts a steplike profile, in agreement with Gordon et al., while for smaller values of s0, a gradual decreasing coverage profile is predicted. Furthermore, experiments were performed to quantify the conformality for the trimethylaluminum (TMA)/H2O ALD process using macroscopic test structures. It is shown that the experimental data and the simulation results follow the same trends.
Keywords
THIN-FILMS, thin films, STEP-COVERAGE, atomic layer deposition, probability

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MLA
Dendooven, Jolien, Davy Deduytsche, Jan Musschoot, et al. “Modeling the Conformality of Atomic Layer Deposition: The Effect of Sticking Probability.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156.4 (2009): P63–P67. Print.
APA
Dendooven, J., Deduytsche, D., Musschoot, J., Vanmeirhaeghe, R., & Detavernier, C. (2009). Modeling the conformality of atomic layer deposition: the effect of sticking probability. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(4), P63–P67.
Chicago author-date
Dendooven, Jolien, Davy Deduytsche, Jan Musschoot, Roland Vanmeirhaeghe, and Christophe Detavernier. 2009. “Modeling the Conformality of Atomic Layer Deposition: The Effect of Sticking Probability.” Journal of the Electrochemical Society 156 (4): P63–P67.
Chicago author-date (all authors)
Dendooven, Jolien, Davy Deduytsche, Jan Musschoot, Roland Vanmeirhaeghe, and Christophe Detavernier. 2009. “Modeling the Conformality of Atomic Layer Deposition: The Effect of Sticking Probability.” Journal of the Electrochemical Society 156 (4): P63–P67.
Vancouver
1.
Dendooven J, Deduytsche D, Musschoot J, Vanmeirhaeghe R, Detavernier C. Modeling the conformality of atomic layer deposition: the effect of sticking probability. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2009;156(4):P63–P67.
IEEE
[1]
J. Dendooven, D. Deduytsche, J. Musschoot, R. Vanmeirhaeghe, and C. Detavernier, “Modeling the conformality of atomic layer deposition: the effect of sticking probability,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 4, pp. P63–P67, 2009.
@article{531012,
  abstract     = {The key advantage of atomic layer deposition (ALD) is undoubtedly the excellent step coverage, which allows for conformal deposition of thin films in high-aspect-ratio structures. In this paper, a model is proposed to predict the deposited film thickness as a function of depth inside a hole. The main model parameters are the gas pressure, the deposition temperature, and the initial sticking probability of the precursor molecules. Earlier work by Gordon et al. assumed a sticking probability of 0/100% for molecules hitting a covered/uncovered section of the wall of the hole, thus resulting in a stepwise film-thickness profile. In this
work, the sticking probability is related to the surface coverage theta by Langmuir’s equation s(theta) = s0(1−theta), whereby the initial sticking probability s0 is now an adjustable model parameter. For s0~=100%, the model predicts a steplike profile, in agreement with Gordon et al., while for smaller values of s0, a gradual decreasing coverage profile is predicted. Furthermore, experiments were performed to quantify the conformality for the trimethylaluminum (TMA)/H2O ALD process using macroscopic test structures. It is shown that the experimental data and the simulation results follow the same trends.},
  author       = {Dendooven, Jolien and Deduytsche, Davy and Musschoot, Jan and Vanmeirhaeghe, Roland and Detavernier, Christophe},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  keywords     = {THIN-FILMS,thin films,STEP-COVERAGE,atomic layer deposition,probability},
  language     = {eng},
  number       = {4},
  pages        = {P63--P67},
  title        = {Modeling the conformality of atomic layer deposition: the effect of sticking probability},
  url          = {http://dx.doi.org/10.1149/1.3072694},
  volume       = {156},
  year         = {2009},
}

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