Advanced search
1 file | 444.80 KB Add to list

Atomic layer deposition of titanium nitride from TDMAT precursor

(2009) MICROELECTRONIC ENGINEERING. 86(1). p.72-77
Author
Organization
Abstract
TiN was grown by atomic layer deposition (ALD) from tetrakis(dimethylamino)titanium (TDMAT). Both thermal and plasma enhanced processes were studied, with N-2 and NH3 as reactive gases. Using an optimized thermal ammonia based process, a growth rate of 0.06 nm/cycle and a resistivity of 53 . 10(3) mu Omega cm were achieved. With an optimized plasma enhanced NH3 process, a growth rate of 0.08 nm/cycle and a resistivity of 180 mu Omega cm could be obtained. X-ray photo electron spectroscopy (XPS) showed that the difference in resistivity correlates with the purity of the deposited films. The high resistivity of thermal AUD films is caused by oxygen (37%) and carbon (9%) contamination. For the film deposited with optimized plasma conditions, impurity levels below 6% could be achieved. The copper diffusion barrier properties of the TiN films were determined by in-situ X-ray diffraction (XRD) and were found to be as good as or better than those of films deposited with physical vapor deposition (PVD).

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 444.80 KB

Citation

Please use this url to cite or link to this publication:

MLA
Musschoot, Jan, Qi Xie, Davy Deduytsche, et al. “Atomic Layer Deposition of Titanium Nitride from TDMAT Precursor.” MICROELECTRONIC ENGINEERING 86.1 (2009): 72–77. Print.
APA
Musschoot, J., Xie, Q., Deduytsche, D., Van den Berghe, S., Van Meirhaeghe, R., & Detavernier, C. (2009). Atomic layer deposition of titanium nitride from TDMAT precursor. MICROELECTRONIC ENGINEERING, 86(1), 72–77.
Chicago author-date
Musschoot, Jan, Qi Xie, Davy Deduytsche, Sven Van den Berghe, Roland Van Meirhaeghe, and Christophe Detavernier. 2009. “Atomic Layer Deposition of Titanium Nitride from TDMAT Precursor.” Microelectronic Engineering 86 (1): 72–77.
Chicago author-date (all authors)
Musschoot, Jan, Qi Xie, Davy Deduytsche, Sven Van den Berghe, Roland Van Meirhaeghe, and Christophe Detavernier. 2009. “Atomic Layer Deposition of Titanium Nitride from TDMAT Precursor.” Microelectronic Engineering 86 (1): 72–77.
Vancouver
1.
Musschoot J, Xie Q, Deduytsche D, Van den Berghe S, Van Meirhaeghe R, Detavernier C. Atomic layer deposition of titanium nitride from TDMAT precursor. MICROELECTRONIC ENGINEERING. 2009;86(1):72–7.
IEEE
[1]
J. Musschoot, Q. Xie, D. Deduytsche, S. Van den Berghe, R. Van Meirhaeghe, and C. Detavernier, “Atomic layer deposition of titanium nitride from TDMAT precursor,” MICROELECTRONIC ENGINEERING, vol. 86, no. 1, pp. 72–77, 2009.
@article{525249,
  abstract     = {TiN was grown by atomic layer deposition (ALD) from tetrakis(dimethylamino)titanium (TDMAT). Both thermal and plasma enhanced processes were studied, with N-2 and NH3 as reactive gases. Using an optimized thermal ammonia based process, a growth rate of 0.06 nm/cycle and a resistivity of 53 . 10(3) mu Omega cm were achieved. With an optimized plasma enhanced NH3 process, a growth rate of 0.08 nm/cycle and a resistivity of 180 mu Omega cm could be obtained. X-ray photo electron spectroscopy (XPS) showed that the difference in resistivity correlates with the purity of the deposited films. The high resistivity of thermal AUD films is caused by oxygen (37%) and carbon (9%) contamination. For the film deposited with optimized plasma conditions, impurity levels below 6% could be achieved. The copper diffusion barrier properties of the TiN films were determined by in-situ X-ray diffraction (XRD) and were found to be as good as or better than those of films deposited with physical vapor deposition (PVD).},
  author       = {Musschoot, Jan and Xie, Qi and Deduytsche, Davy and Van den Berghe, Sven and Van Meirhaeghe, Roland and Detavernier, Christophe},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  language     = {eng},
  number       = {1},
  pages        = {72--77},
  title        = {Atomic layer deposition of titanium nitride from TDMAT precursor},
  url          = {http://dx.doi.org/10.1016/j.mee.2008.09.036},
  volume       = {86},
  year         = {2009},
}

Altmetric
View in Altmetric
Web of Science
Times cited: