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Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma

(2008) MICROELECTRONIC ENGINEERING. 85(10). p.2059-2063
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Organization
Abstract
Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma. (C) 2008 Elsevier B.V. All rights reserved.
Keywords
Atomic layer deposition, Diffusion barrier, TaN, Cu metallization

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MLA
Xie, Qi, Jan Musschoot, Christophe Detavernier, et al. “Diffusion Barrier Properties of TaNx Films Prepared by Plasma Enhanced Atomic Layer Deposition from PDMAT with N-2 or NH3 Plasma.” MICROELECTRONIC ENGINEERING 85.10 (2008): 2059–2063. Print.
APA
Xie, Qi, Musschoot, J., Detavernier, C., Deduytsche, D., Van Meirhaeghe, R., Van den Berghe, S., Jiang, Y.-L., et al. (2008). Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma. MICROELECTRONIC ENGINEERING, 85(10), 2059–2063.
Chicago author-date
Xie, Qi, Jan Musschoot, Christophe Detavernier, Davy Deduytsche, Roland Van Meirhaeghe, Sven Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li, and Xin-Ping Qu. 2008. “Diffusion Barrier Properties of TaNx Films Prepared by Plasma Enhanced Atomic Layer Deposition from PDMAT with N-2 or NH3 Plasma.” Microelectronic Engineering 85 (10): 2059–2063.
Chicago author-date (all authors)
Xie, Qi, Jan Musschoot, Christophe Detavernier, Davy Deduytsche, Roland Van Meirhaeghe, Sven Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li, and Xin-Ping Qu. 2008. “Diffusion Barrier Properties of TaNx Films Prepared by Plasma Enhanced Atomic Layer Deposition from PDMAT with N-2 or NH3 Plasma.” Microelectronic Engineering 85 (10): 2059–2063.
Vancouver
1.
Xie Q, Musschoot J, Detavernier C, Deduytsche D, Van Meirhaeghe R, Van den Berghe S, et al. Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma. MICROELECTRONIC ENGINEERING. 2008;85(10):2059–63.
IEEE
[1]
Q. Xie et al., “Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma,” MICROELECTRONIC ENGINEERING, vol. 85, no. 10, pp. 2059–2063, 2008.
@article{525134,
  abstract     = {Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma. (C) 2008 Elsevier B.V. All rights reserved.},
  author       = {Xie, Qi and Musschoot, Jan and Detavernier, Christophe and Deduytsche, Davy and Van Meirhaeghe, Roland and Van den Berghe, Sven and Jiang, Yu-Long and Ru, Guo-Ping and Li, Bing-Zong and Qu, Xin-Ping},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  keywords     = {Atomic layer deposition,Diffusion barrier,TaN,Cu metallization},
  language     = {eng},
  number       = {10},
  pages        = {2059--2063},
  title        = {Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma},
  url          = {http://dx.doi.org/10.1016/j.mee.2008.05.026},
  volume       = {85},
  year         = {2008},
}

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