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A Comparison of Intrinsic Point Defect Properties in Si and Ge

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MLA
Vanhellemont, Jan, P SPIEWAK, K SUEOKA, et al. “A Comparison of Intrinsic Point Defect Properties in Si and Ge.” DOPING ENGINEERING FOR FRONT-END PROCESSING 1070 (2008): 261–266. Print.
APA
Vanhellemont, J., SPIEWAK, P., SUEOKA, K., SIMOEN, E., & ROMANDIC, I. (2008). A Comparison of Intrinsic Point Defect Properties in Si and Ge. DOPING ENGINEERING FOR FRONT-END PROCESSING, 1070, 261–266.
Chicago author-date
Vanhellemont, Jan, P SPIEWAK, K SUEOKA, E SIMOEN, and I ROMANDIC. 2008. “A Comparison of Intrinsic Point Defect Properties in Si and Ge.” Doping Engineering for Front-end Processing 1070: 261–266.
Chicago author-date (all authors)
Vanhellemont, Jan, P SPIEWAK, K SUEOKA, E SIMOEN, and I ROMANDIC. 2008. “A Comparison of Intrinsic Point Defect Properties in Si and Ge.” Doping Engineering for Front-end Processing 1070: 261–266.
Vancouver
1.
Vanhellemont J, SPIEWAK P, SUEOKA K, SIMOEN E, ROMANDIC I. A Comparison of Intrinsic Point Defect Properties in Si and Ge. DOPING ENGINEERING FOR FRONT-END PROCESSING. 2008;1070:261–6.
IEEE
[1]
J. Vanhellemont, P. SPIEWAK, K. SUEOKA, E. SIMOEN, and I. ROMANDIC, “A Comparison of Intrinsic Point Defect Properties in Si and Ge,” DOPING ENGINEERING FOR FRONT-END PROCESSING, vol. 1070, pp. 261–266, 2008.
@article{445573,
  author       = {Vanhellemont, Jan and SPIEWAK, P and SUEOKA, K and SIMOEN, E and ROMANDIC, I},
  issn         = {0272-9172},
  journal      = {DOPING ENGINEERING FOR FRONT-END PROCESSING},
  language     = {eng},
  pages        = {261--266},
  title        = {A Comparison of Intrinsic Point Defect Properties in Si and Ge},
  volume       = {1070},
  year         = {2008},
}

Web of Science
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