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On the characterisation of grown-in defects in Czochralski-grown Si and Ge

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Chicago
Vanhellemont, Jan, J VAN STEENBERGEN, F HOLSTEYNS, P ROUSSEL, M MEURIS, K MLYNARCZYK, P SPIEWAK, W GEENS, and I ROMANDIC. 2008. “On the Characterisation of Grown-in Defects in Czochralski-grown Si and Ge.” Journal of Materials Science-materials in Electronics 19: 24.
APA
Vanhellemont, J., VAN STEENBERGEN, J., HOLSTEYNS, F., ROUSSEL, P., MEURIS, M., MLYNARCZYK, K., SPIEWAK, P., et al. (2008). On the characterisation of grown-in defects in Czochralski-grown Si and Ge. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 19, 24.
Vancouver
1.
Vanhellemont J, VAN STEENBERGEN J, HOLSTEYNS F, ROUSSEL P, MEURIS M, MLYNARCZYK K, et al. On the characterisation of grown-in defects in Czochralski-grown Si and Ge. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2008;19:24.
MLA
Vanhellemont, Jan, J VAN STEENBERGEN, F HOLSTEYNS, et al. “On the Characterisation of Grown-in Defects in Czochralski-grown Si and Ge.” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 19 (2008): 24. Print.
@article{444478,
  author       = {Vanhellemont, Jan and VAN STEENBERGEN, J and HOLSTEYNS, F and ROUSSEL, P and MEURIS, M and MLYNARCZYK, K and SPIEWAK, P and GEENS, W and ROMANDIC, I},
  issn         = {0957-4522},
  journal      = {JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS},
  language     = {eng},
  pages        = {S24-S31},
  title        = {On the characterisation of grown-in defects in Czochralski-grown Si and Ge},
  volume       = {19},
  year         = {2008},
}

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