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Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals

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Abstract
For the development of the crystal pulling process for 450 mm-diameter defect-free Si crystals, the impact of thermal stress on intrinsic point defect behavior during crystal growth is studied using extensive density functional theory calculations. The impact of thermal stress on the so-called Voronkov criterion and on void formation is clarified and compared with published experimental results.
Keywords
Point defects, Thermal stress, Defect-free Si crystal, Density functional study, Void, SILICON

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MLA
Sueoka, Koji, Eiji Kamiyama, and Jan Vanhellemont. “Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-diameter Defect-free Si Crystals.” Solid State Phenomena. Ed. JD Murphy. Vol. 205–206. Stafa-Zürich, Switzerland: Trans Tech, 2014. 163–168. Print.
APA
Sueoka, Koji, Kamiyama, E., & Vanhellemont, J. (2014). Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals. In J. Murphy (Ed.), Solid State Phenomena (Vol. 205–206, pp. 163–168). Presented at the 15th International conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST), Stafa-Zürich, Switzerland: Trans Tech.
Chicago author-date
Sueoka, Koji, Eiji Kamiyama, and Jan Vanhellemont. 2014. “Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-diameter Defect-free Si Crystals.” In Solid State Phenomena, ed. JD Murphy, 205-206:163–168. Stafa-Zürich, Switzerland: Trans Tech.
Chicago author-date (all authors)
Sueoka, Koji, Eiji Kamiyama, and Jan Vanhellemont. 2014. “Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-diameter Defect-free Si Crystals.” In Solid State Phenomena, ed. JD Murphy, 205-206:163–168. Stafa-Zürich, Switzerland: Trans Tech.
Vancouver
1.
Sueoka K, Kamiyama E, Vanhellemont J. Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals. In: Murphy J, editor. Solid State Phenomena. Stafa-Zürich, Switzerland: Trans Tech; 2014. p. 163–8.
IEEE
[1]
K. Sueoka, E. Kamiyama, and J. Vanhellemont, “Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals,” in Solid State Phenomena, Oxford, UK, 2014, vol. 205–206, pp. 163–168.
@inproceedings{4430883,
  abstract     = {For the development of the crystal pulling process for 450 mm-diameter defect-free Si crystals, the impact of thermal stress on intrinsic point defect behavior during crystal growth is studied using extensive density functional theory calculations. The impact of thermal stress on the so-called Voronkov criterion and on void formation is clarified and compared with published experimental results.},
  author       = {Sueoka, Koji and Kamiyama, Eiji and Vanhellemont, Jan},
  booktitle    = {Solid State Phenomena},
  editor       = {Murphy, JD},
  issn         = {1012-0394},
  keywords     = {Point defects,Thermal stress,Defect-free Si crystal,Density functional study,Void,SILICON},
  language     = {eng},
  location     = {Oxford, UK},
  pages        = {163--168},
  publisher    = {Trans Tech},
  title        = {Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals},
  url          = {http://dx.doi.org/10.4028/www.scientific.net/SSP.205-206.163},
  volume       = {205-206},
  year         = {2014},
}

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