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Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon

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Abstract
Ultra-shallow junctions were formed by low-energy As ion implantation followed by furnace annealing. It was found that a significant amount of oxygen is redistributed from the silicon bulk to the As-implanted region. Using a marker layer created by implantation of O-18 isotope, it is confirmed that a large number of interstitial oxygen atoms are transferred from the bulk of Si wafer to the surface during dopant activation annealing, which leads to an increase of the surface oxide thickness. Estimation of the oxygen diffusivity in silicon during the 950 degrees C anneal, yields a value close to 1 Chi 10(-10) cm(2) s(-1) which is more than an order of magnitude larger than the literature value which is close to 7 Chi 10(-12) cm(2) s(-1).
Keywords
impurities, ion implantation, p-n junctions, annealing, depth profile, oxygen, arsenic, gettering, CZOCHRALSKI SILICON, PRECIPITATION, DIFFUSION, OXIDE, SI, IMPLANTATION, MECHANISMS, ANTIMONY

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Chicago
Oberemok, O, V Kladko, V Litovchenko, B Romanyuk, V Popov, V Melnik, A Sarikov, O Gudymenko, and Jan Vanhellemont. 2014. “Stimulated Oxygen Impurity Gettering Under Ultra-shallow Junction Formation in Silicon.” Semiconductor Science and Technology 29 (5).
APA
Oberemok, O., Kladko, V., Litovchenko, V., Romanyuk, B., Popov, V., Melnik, V., Sarikov, A., et al. (2014). Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29(5).
Vancouver
1.
Oberemok O, Kladko V, Litovchenko V, Romanyuk B, Popov V, Melnik V, et al. Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2014;29(5).
MLA
Oberemok, O, V Kladko, V Litovchenko, et al. “Stimulated Oxygen Impurity Gettering Under Ultra-shallow Junction Formation in Silicon.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 29.5 (2014): n. pag. Print.
@article{4426355,
  abstract     = {Ultra-shallow junctions were formed by low-energy As ion implantation followed by furnace annealing. It was found that a significant amount of oxygen is redistributed from the silicon bulk to the As-implanted region. Using a marker layer created by implantation of O-18 isotope, it is confirmed that a large number of interstitial oxygen atoms are transferred from the bulk of Si wafer to the surface during dopant activation annealing, which leads to an increase of the surface oxide thickness. Estimation of the oxygen diffusivity in silicon during the 950 degrees C anneal, yields a value close to 1 Chi 10(-10) cm(2) s(-1) which is more than an order of magnitude larger than the literature value which is close to 7 Chi 10(-12) cm(2) s(-1).},
  articleno    = {055008},
  author       = {Oberemok, O and Kladko, V and Litovchenko, V and Romanyuk, B and Popov, V and Melnik, V and Sarikov, A and Gudymenko, O and Vanhellemont, Jan},
  issn         = {0268-1242},
  journal      = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  keyword      = {impurities,ion implantation,p-n junctions,annealing,depth profile,oxygen,arsenic,gettering,CZOCHRALSKI SILICON,PRECIPITATION,DIFFUSION,OXIDE,SI,IMPLANTATION,MECHANISMS,ANTIMONY},
  language     = {eng},
  number       = {5},
  pages        = {7},
  title        = {Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon},
  url          = {http://dx.doi.org/10.1088/0268-1242/29/5/055008},
  volume       = {29},
  year         = {2014},
}

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