Determination of the Si Young's modulus between room and melt temperature using the impulse excitation technique
- Author
- Akhilesh K Swarnakar, Omer Van der Biest and Jan Vanhellemont (UGent)
- Organization
- Keywords
- Si, Young's modulus, elastic compliances, impulse excitation technique, SILICON SINGLE-CRYSTAL, ELASTIC-CONSTANTS, GERMANIUM, IMPACT, DIAMOND
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-4392708
- MLA
- Swarnakar, Akhilesh K., et al. “Determination of the Si Young’s Modulus between Room and Melt Temperature Using the Impulse Excitation Technique.” Physica Status Solidi C-Current Topics in Solid State Physics, edited by F Cristiano et al., vol. 11, no. 1, Wiley-VCH, 2014, pp. 150–55, doi:10.1002/pssc.201300101.
- APA
- Swarnakar, A. K., Van der Biest, O., & Vanhellemont, J. (2014). Determination of the Si Young’s modulus between room and melt temperature using the impulse excitation technique. In F. Cristiano, P. Pichler, C. Tavernier, & W. Windl (Eds.), Physica Status Solidi C-Current Topics in Solid State Physics (Vol. 11, pp. 150–155). https://doi.org/10.1002/pssc.201300101
- Chicago author-date
- Swarnakar, Akhilesh K, Omer Van der Biest, and Jan Vanhellemont. 2014. “Determination of the Si Young’s Modulus between Room and Melt Temperature Using the Impulse Excitation Technique.” In Physica Status Solidi C-Current Topics in Solid State Physics, edited by F Cristiano, P Pichler, C Tavernier, and W Windl, 11:150–55. Weinheim, Germany: Wiley-VCH. https://doi.org/10.1002/pssc.201300101.
- Chicago author-date (all authors)
- Swarnakar, Akhilesh K, Omer Van der Biest, and Jan Vanhellemont. 2014. “Determination of the Si Young’s Modulus between Room and Melt Temperature Using the Impulse Excitation Technique.” In Physica Status Solidi C-Current Topics in Solid State Physics, ed by. F Cristiano, P Pichler, C Tavernier, and W Windl, 11:150–155. Weinheim, Germany: Wiley-VCH. doi:10.1002/pssc.201300101.
- Vancouver
- 1.Swarnakar AK, Van der Biest O, Vanhellemont J. Determination of the Si Young’s modulus between room and melt temperature using the impulse excitation technique. In: Cristiano F, Pichler P, Tavernier C, Windl W, editors. Physica Status Solidi C-Current Topics in Solid State Physics. Weinheim, Germany: Wiley-VCH; 2014. p. 150–5.
- IEEE
- [1]A. K. Swarnakar, O. Van der Biest, and J. Vanhellemont, “Determination of the Si Young’s modulus between room and melt temperature using the impulse excitation technique,” in Physica Status Solidi C-Current Topics in Solid State Physics, Strasbourg, France, 2014, vol. 11, no. 1, pp. 150–155.
@inproceedings{4392708, author = {{Swarnakar, Akhilesh K and Van der Biest, Omer and Vanhellemont, Jan}}, booktitle = {{Physica Status Solidi C-Current Topics in Solid State Physics}}, editor = {{Cristiano, F and Pichler, P and Tavernier, C and Windl, W}}, issn = {{1862-6351}}, keywords = {{Si,Young's modulus,elastic compliances,impulse excitation technique,SILICON SINGLE-CRYSTAL,ELASTIC-CONSTANTS,GERMANIUM,IMPACT,DIAMOND}}, language = {{eng}}, location = {{Strasbourg, France}}, number = {{1}}, pages = {{150--155}}, publisher = {{Wiley-VCH}}, title = {{Determination of the Si Young's modulus between room and melt temperature using the impulse excitation technique}}, url = {{http://doi.org/10.1002/pssc.201300101}}, volume = {{11}}, year = {{2014}}, }
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