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Determination of the Si Young's modulus between room and melt temperature using the impulse excitation technique

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Keywords
Si, Young's modulus, elastic compliances, impulse excitation technique, SILICON SINGLE-CRYSTAL, ELASTIC-CONSTANTS, GERMANIUM, IMPACT, DIAMOND

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MLA
Swarnakar, Akhilesh K., et al. “Determination of the Si Young’s Modulus between Room and Melt Temperature Using the Impulse Excitation Technique.” Physica Status Solidi C-Current Topics in Solid State Physics, edited by F Cristiano et al., vol. 11, no. 1, Wiley-VCH, 2014, pp. 150–55, doi:10.1002/pssc.201300101.
APA
Swarnakar, A. K., Van der Biest, O., & Vanhellemont, J. (2014). Determination of the Si Young’s modulus between room and melt temperature using the impulse excitation technique. In F. Cristiano, P. Pichler, C. Tavernier, & W. Windl (Eds.), Physica Status Solidi C-Current Topics in Solid State Physics (Vol. 11, pp. 150–155). https://doi.org/10.1002/pssc.201300101
Chicago author-date
Swarnakar, Akhilesh K, Omer Van der Biest, and Jan Vanhellemont. 2014. “Determination of the Si Young’s Modulus between Room and Melt Temperature Using the Impulse Excitation Technique.” In Physica Status Solidi C-Current Topics in Solid State Physics, edited by F Cristiano, P Pichler, C Tavernier, and W Windl, 11:150–55. Weinheim, Germany: Wiley-VCH. https://doi.org/10.1002/pssc.201300101.
Chicago author-date (all authors)
Swarnakar, Akhilesh K, Omer Van der Biest, and Jan Vanhellemont. 2014. “Determination of the Si Young’s Modulus between Room and Melt Temperature Using the Impulse Excitation Technique.” In Physica Status Solidi C-Current Topics in Solid State Physics, ed by. F Cristiano, P Pichler, C Tavernier, and W Windl, 11:150–155. Weinheim, Germany: Wiley-VCH. doi:10.1002/pssc.201300101.
Vancouver
1.
Swarnakar AK, Van der Biest O, Vanhellemont J. Determination of the Si Young’s modulus between room and melt temperature using the impulse excitation technique. In: Cristiano F, Pichler P, Tavernier C, Windl W, editors. Physica Status Solidi C-Current Topics in Solid State Physics. Weinheim, Germany: Wiley-VCH; 2014. p. 150–5.
IEEE
[1]
A. K. Swarnakar, O. Van der Biest, and J. Vanhellemont, “Determination of the Si Young’s modulus between room and melt temperature using the impulse excitation technique,” in Physica Status Solidi C-Current Topics in Solid State Physics, Strasbourg, France, 2014, vol. 11, no. 1, pp. 150–155.
@inproceedings{4392708,
  author       = {{Swarnakar, Akhilesh K and Van der Biest, Omer and Vanhellemont, Jan}},
  booktitle    = {{Physica Status Solidi C-Current Topics in Solid State Physics}},
  editor       = {{Cristiano, F and Pichler, P and Tavernier, C and Windl, W}},
  issn         = {{1862-6351}},
  keywords     = {{Si,Young's modulus,elastic compliances,impulse excitation technique,SILICON SINGLE-CRYSTAL,ELASTIC-CONSTANTS,GERMANIUM,IMPACT,DIAMOND}},
  language     = {{eng}},
  location     = {{Strasbourg, France}},
  number       = {{1}},
  pages        = {{150--155}},
  publisher    = {{Wiley-VCH}},
  title        = {{Determination of the Si Young's modulus between room and melt temperature using the impulse excitation technique}},
  url          = {{http://doi.org/10.1002/pssc.201300101}},
  volume       = {{11}},
  year         = {{2014}},
}

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