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Simulation of vacancy cluster formation and binding energies in single crystal germanium

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Chicago
SPIEWAK, P, KJ KURZYDLOWSKI, Jan Vanhellemont, P WABINSKI, K MLYNARCZYK, and I ROMANDIC. 2007. “Simulation of Vacancy Cluster Formation and Binding Energies in Single Crystal Germanium.” Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II 994: 67–72.
APA
SPIEWAK, P., KURZYDLOWSKI, K., Vanhellemont, J., WABINSKI, P., MLYNARCZYK, K., & ROMANDIC, I. (2007). Simulation of vacancy cluster formation and binding energies in single crystal germanium. Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II, 994, 67–72.
Vancouver
1.
SPIEWAK P, KURZYDLOWSKI K, Vanhellemont J, WABINSKI P, MLYNARCZYK K, ROMANDIC I. Simulation of vacancy cluster formation and binding energies in single crystal germanium. Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II. 2007;994:67–72.
MLA
SPIEWAK, P, KJ KURZYDLOWSKI, Jan Vanhellemont, et al. “Simulation of Vacancy Cluster Formation and Binding Energies in Single Crystal Germanium.” Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II 994 (2007): 67–72. Print.
@article{438096,
  author       = {SPIEWAK, P and KURZYDLOWSKI, KJ and Vanhellemont, Jan and WABINSKI, P and MLYNARCZYK, K and ROMANDIC, I},
  issn         = {0272-9172},
  journal      = {Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II},
  language     = {eng},
  pages        = {67--72},
  title        = {Simulation of vacancy cluster formation and binding energies in single crystal germanium},
  volume       = {994},
  year         = {2007},
}

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