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Control of the oxidation state of manganese during plasma enhanced atomic layer deposition with the Mn(thd)3 precursor

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SOS LION
Keywords
Atomic layer deposition, manganese oxide, process development

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Citation

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Chicago
Mattelaer, Felix, Jolien Dendooven, Philippe Vereecken, and Christophe Detavernier. 2014. “Control of the Oxidation State of Manganese During Plasma Enhanced Atomic Layer Deposition with the Mn(thd)3 Precursor.” In Atomic Layer Deposition, 14th International Conference, Abstracts.
APA
Mattelaer, F., Dendooven, J., Vereecken, P., & Detavernier, C. (2014). Control of the oxidation state of manganese during plasma enhanced atomic layer deposition with the Mn(thd)3 precursor. Atomic Layer Deposition, 14th International conference, Abstracts. Presented at the 14th International conference on Atomic Layer Deposition (ALD 2014).
Vancouver
1.
Mattelaer F, Dendooven J, Vereecken P, Detavernier C. Control of the oxidation state of manganese during plasma enhanced atomic layer deposition with the Mn(thd)3 precursor. Atomic Layer Deposition, 14th International conference, Abstracts. 2014.
MLA
Mattelaer, Felix, Jolien Dendooven, Philippe Vereecken, et al. “Control of the Oxidation State of Manganese During Plasma Enhanced Atomic Layer Deposition with the Mn(thd)3 Precursor.” Atomic Layer Deposition, 14th International Conference, Abstracts. 2014. Print.
@inproceedings{4365585,
  author       = {Mattelaer, Felix and Dendooven, Jolien and Vereecken, Philippe and Detavernier, Christophe},
  booktitle    = {Atomic Layer Deposition, 14th International conference, Abstracts},
  language     = {eng},
  location     = {Kyoto, Japan},
  title        = {Control of the oxidation state of manganese during plasma enhanced atomic layer deposition with the Mn(thd)3 precursor},
  year         = {2014},
}