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Controlling the oxidation state of manganese during plasma enhanced atomic layer deposition using the Mn(thd)3 precursor

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SOS-LION
Keywords
process development, Atomic layer deposition, manganese oxide

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Citation

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Chicago
Mattelaer, Felix, Jolien Dendooven, Philippe Vereecken, and Christophe Detavernier. 2014. “Controlling the Oxidation State of Manganese During Plasma Enhanced Atomic Layer Deposition Using the Mn(thd)3 Precursor.” In Atomic Layer Deposition, 12th International Baltic Conference, Abstracts.
APA
Mattelaer, F., Dendooven, J., Vereecken, P., & Detavernier, C. (2014). Controlling the oxidation state of manganese during plasma enhanced atomic layer deposition using the Mn(thd)3 precursor. Atomic Layer Deposition, 12th International Baltic conference, Abstracts. Presented at the 12th International Baltic conference on Atomic Layer Deposition.
Vancouver
1.
Mattelaer F, Dendooven J, Vereecken P, Detavernier C. Controlling the oxidation state of manganese during plasma enhanced atomic layer deposition using the Mn(thd)3 precursor. Atomic Layer Deposition, 12th International Baltic conference, Abstracts. 2014.
MLA
Mattelaer, Felix, Jolien Dendooven, Philippe Vereecken, et al. “Controlling the Oxidation State of Manganese During Plasma Enhanced Atomic Layer Deposition Using the Mn(thd)3 Precursor.” Atomic Layer Deposition, 12th International Baltic Conference, Abstracts. 2014. Print.
@inproceedings{4365562,
  author       = {Mattelaer, Felix and Dendooven, Jolien and Vereecken, Philippe and Detavernier, Christophe},
  booktitle    = {Atomic Layer Deposition, 12th International Baltic conference, Abstracts},
  language     = {eng},
  location     = {Helsinki, Finland},
  title        = {Controlling the oxidation state of manganese during plasma enhanced atomic layer deposition using the Mn(thd)3 precursor},
  year         = {2014},
}