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Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics

(2012) ECS SOLID STATE LETTERS. 1(3). p.P54-P56
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Keywords
TIO2 FILMS, ATOMIC LAYER DEPOSITION, PLASMA, INTERCONNECTS, HFO2, THIN-FILMS

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Citation

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MLA
Ding, Shao-Feng, Qi Xie, Fei Chen, et al. “Improved Thermal Stability and Electrical Performance by Using PEALD Ultrathin Al2O3 Film with Ta as Cu Diffusion Barrier on Low k Dielectrics.” ECS SOLID STATE LETTERS 1.3 (2012): P54–P56. Print.
APA
Ding, S.-F., Xie, Q., Chen, F., Lu, H.-S., Deng, S., Deduytsche, D., Detavernier, C., et al. (2012). Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics. ECS SOLID STATE LETTERS, 1(3), P54–P56.
Chicago author-date
Ding, Shao-Feng, Qi Xie, Fei Chen, Hai-Sheng Lu, Shaoren Deng, Davy Deduytsche, Christophe Detavernier, and Xin-Ping Qu. 2012. “Improved Thermal Stability and Electrical Performance by Using PEALD Ultrathin Al2O3 Film with Ta as Cu Diffusion Barrier on Low k Dielectrics.” Ecs Solid State Letters 1 (3): P54–P56.
Chicago author-date (all authors)
Ding, Shao-Feng, Qi Xie, Fei Chen, Hai-Sheng Lu, Shaoren Deng, Davy Deduytsche, Christophe Detavernier, and Xin-Ping Qu. 2012. “Improved Thermal Stability and Electrical Performance by Using PEALD Ultrathin Al2O3 Film with Ta as Cu Diffusion Barrier on Low k Dielectrics.” Ecs Solid State Letters 1 (3): P54–P56.
Vancouver
1.
Ding S-F, Xie Q, Chen F, Lu H-S, Deng S, Deduytsche D, et al. Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics. ECS SOLID STATE LETTERS. 2012;1(3):P54–P56.
IEEE
[1]
S.-F. Ding et al., “Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics,” ECS SOLID STATE LETTERS, vol. 1, no. 3, pp. P54–P56, 2012.
@article{4357582,
  author       = {Ding, Shao-Feng and Xie, Qi and Chen, Fei and Lu, Hai-Sheng and Deng, Shaoren and Deduytsche, Davy and Detavernier, Christophe and Qu, Xin-Ping},
  issn         = {2162-8742},
  journal      = {ECS SOLID STATE LETTERS},
  keywords     = {TIO2 FILMS,ATOMIC LAYER DEPOSITION,PLASMA,INTERCONNECTS,HFO2,THIN-FILMS},
  language     = {eng},
  number       = {3},
  pages        = {P54--P56},
  title        = {Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics},
  url          = {http://dx.doi.org/10.1149/2.006203ssl},
  volume       = {1},
  year         = {2012},
}

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