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Microstructural aspects of the early stages of GaN growth by MOCVD

Author
Organization
Abstract
The effects of changing the annealing times and the growth temperature of GaN nucleation layers (NL), prior to epilayer growth, have been investigated by ATM, SEM, TEM and HR-TEM. Increasing the growth temperature changes the growth mode from a three-dimensional one (3D) to an increasingly two-dimensional one (2D), which also results in a high density of stacking faults. Increasing the annealing time of the NLs at 560degreesC causes the morphology to become rough and leads to layers with an increasing amount of the zinc blende phase.
Keywords
CHEMICAL-VAPOR-DEPOSITION, FILMS, BUFFER LAYERS, LIGHT

Citation

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Chicago
Ramloll, CS, Zahia Bougrioua, JS Barnard, CJ Humphreys, and Ingrid Moerman. 2001. “Microstructural Aspects of the Early Stages of GaN Growth by MOCVD.” Ed. M Aindow and CJ Kiely. Institute of Physics Conference Series 168: 469–472.
APA
Ramloll, C., Bougrioua, Z., Barnard, J., Humphreys, C., & Moerman, I. (2001). Microstructural aspects of the early stages of GaN growth by MOCVD. (M. Aindow & C. Kiely, Eds.)Institute of Physics Conference Series, 168, 469–472. Presented at the Conference of the Electron Microscopy and Analysis Group.
Vancouver
1.
Ramloll C, Bougrioua Z, Barnard J, Humphreys C, Moerman I. Microstructural aspects of the early stages of GaN growth by MOCVD. Aindow M, Kiely C, editors. Institute of Physics Conference Series. Bristol, UK: IOP; 2001;168:469–72.
MLA
Ramloll, CS, Zahia Bougrioua, JS Barnard, et al. “Microstructural Aspects of the Early Stages of GaN Growth by MOCVD.” Ed. M Aindow & CJ Kiely. Institute of Physics Conference Series 168 (2001): 469–472. Print.
@article{427796,
  abstract     = {The effects of changing the annealing times and the growth temperature of GaN nucleation layers (NL), prior to epilayer growth, have been investigated by ATM, SEM, TEM and HR-TEM. Increasing the growth temperature changes the growth mode from a three-dimensional one (3D) to an increasingly two-dimensional one (2D), which also results in a high density of stacking faults. Increasing the annealing time of the NLs at 560degreesC causes the morphology to become rough and leads to layers with an increasing amount of the zinc blende phase.},
  author       = {Ramloll, CS and Bougrioua, Zahia and Barnard, JS and Humphreys, CJ and Moerman, Ingrid},
  editor       = {Aindow, M and Kiely, CJ},
  isbn         = {9780750308120},
  issn         = {0951-3248},
  journal      = {Institute of Physics Conference Series},
  language     = {eng},
  location     = {Dundee, Scotland, UK},
  pages        = {469--472},
  publisher    = {IOP},
  title        = {Microstructural aspects of the early stages of GaN growth by MOCVD},
  volume       = {168},
  year         = {2001},
}

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