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Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration triplet-ring reflectors

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Center for nano- and biophotonics (NB-Photonics)
Abstract
In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrated III-V/silicon single mode lasers can be realized. Two new designs were implemented: in a first design a multimode interferometer coupler (MMI) - ring resonator combination is used to provide a comb-like reflection spectrum, while in a second design a triplet-ring reflector design is used to obtain the same. A broadband silicon Bragg grating reflector is implemented on the other side of the cavity. The III-V optical amplifier is heterogeneously integrated on the 400nm thick silicon waveguide layer, which is compatible with high-performance modulator designs and allows for efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the optical coupling efficient, both the III-V waveguide and the silicon waveguide are tapered, with a tip width of the III-V waveguide of around 500nm. The III-V thin film optical amplifier is implemented as a 3 mu m wide mesa etched through to the n-type InP contact layer. In this particular device implementation the amplifier section was 500 mu m long. mW-level waveguide coupled output power at 20 degrees C and a side mode suppression ratio of more than 40dB is obtained.
Keywords
heterogeneous integration, silicon photonics, single wavelength lasers

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Citation

Please use this url to cite or link to this publication:

Chicago
Keyvaninia, Shahram, Steven Verstuyft, F Lelarge, GH Duan, S Messaoudene, JM Fedeli, EJ Geluk, et al. 2013. “Heterogeneously Integrated III-V/Si Single Mode Lasers Based on a MMI-ring Configuration Triplet-ring Reflectors.” In Proceedings of SPIE, ed. JM Fedeli, L Vivien, and MK Smit. Vol. 8767. Spie.
APA
Keyvaninia, S., Verstuyft, S., Lelarge, F., Duan, G., Messaoudene, S., Fedeli, J., Geluk, E., et al. (2013). Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration triplet-ring reflectors. In J. Fedeli, L. Vivien, & M. Smit (Eds.), Proceedings of SPIE (Vol. 8767). Presented at the Conference on Integrated Photonics - Materials, Devices, and Applications II, Spie.
Vancouver
1.
Keyvaninia S, Verstuyft S, Lelarge F, Duan G, Messaoudene S, Fedeli J, et al. Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration triplet-ring reflectors. In: Fedeli J, Vivien L, Smit M, editors. Proceedings of SPIE. Spie; 2013.
MLA
Keyvaninia, Shahram et al. “Heterogeneously Integrated III-V/Si Single Mode Lasers Based on a MMI-ring Configuration Triplet-ring Reflectors.” Proceedings of SPIE. Ed. JM Fedeli, L Vivien, & MK Smit. Vol. 8767. Spie, 2013. Print.
@inproceedings{4245783,
  abstract     = {In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrated III-V/silicon single mode lasers can be realized. Two new designs were implemented: in a first design a multimode interferometer coupler (MMI) - ring resonator combination is used to provide a comb-like reflection spectrum, while in a second design a triplet-ring reflector design is used to obtain the same. A broadband silicon Bragg grating reflector is implemented on the other side of the cavity. The III-V optical amplifier is heterogeneously integrated on the 400nm thick silicon waveguide layer, which is compatible with high-performance modulator designs and allows for efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the optical coupling efficient, both the III-V waveguide and the silicon waveguide are tapered, with a tip width of the III-V waveguide of around 500nm. The III-V thin film optical amplifier is implemented as a 3 mu m wide mesa etched through to the n-type InP contact layer. In this particular device implementation the amplifier section was 500 mu m long. mW-level waveguide coupled output power at 20 degrees C and a side mode suppression ratio of more than 40dB is obtained.},
  articleno    = {UNSP 87670N},
  author       = {Keyvaninia, Shahram and Verstuyft, Steven and Lelarge, F and Duan, GH and Messaoudene, S and Fedeli, JM and Geluk, EJ and De Vries, T and Smalbrugge, B and Bolk, J and Smit, M and Van Thourhout, Dries and Roelkens, Günther},
  booktitle    = {Proceedings of SPIE},
  editor       = {Fedeli, JM and Vivien, L and Smit, MK },
  issn         = {0277-786X},
  keywords     = {heterogeneous integration,silicon photonics,single wavelength lasers},
  language     = {eng},
  location     = {Grenoble, France},
  pages        = {5},
  publisher    = {Spie},
  title        = {Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration triplet-ring reflectors},
  url          = {http://dx.doi.org/10.1117/12.2017327},
  volume       = {8767},
  year         = {2013},
}

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