Advanced search
2 files | 1.94 MB

Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study

Author
Organization
Abstract
Sb doping of Cu(In,Ga)Se2 (CIGS) solar cells has been reported to exhibit a positive effect on the morphology of the absorber layer, offering a possibility to lower manufacturing cost by lowering the annealing temperatures during the CIGS deposition. In this work electron microscopy, energy-dispersive x-ray spectroscopy and photoluminescence experiments have been performed on cells deposited on soda-lime glass substrates, adding a thin Sb layer onto the Mo back contact prior to the CIGS absorber deposition. The defect structure of CIGS solar cells doped with Sb in this way has been investigated and is compared with that of undoped reference cells. The influence of substrate temperature during absorber growth has also been evaluated. For all samples the photoluminescence results can be explained by considering three donor–acceptor pair recombination processes involving the same defect pairs.
Keywords
Photoluminescence, Cu(ln_Ga)Se2, TEMPERATURE, SEMICONDUCTOR, Defects, GROWTH

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 1.61 MB
  • ATT00064.pdf
    • full text
    • |
    • open access
    • |
    • PDF
    • |
    • 325.65 KB

Citation

Please use this url to cite or link to this publication:

Chicago
Van Puyvelde, Lisanne, Johan Lauwaert, F Pianezzi, S Nishiwaki, Philippe Smet, Dirk Poelman, AN Tiwari, and Henk Vrielinck. 2014. “Influence of an Sb Doping Layer in CIGS Thin-film Solar Cells: a Photoluminescence Study.” Journal of Physics D-applied Physics 47 (4).
APA
Van Puyvelde, Lisanne, Lauwaert, J., Pianezzi, F., Nishiwaki, S., Smet, P., Poelman, D., Tiwari, A., et al. (2014). Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 47(4).
Vancouver
1.
Van Puyvelde L, Lauwaert J, Pianezzi F, Nishiwaki S, Smet P, Poelman D, et al. Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study. JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2014;47(4).
MLA
Van Puyvelde, Lisanne, Johan Lauwaert, F Pianezzi, et al. “Influence of an Sb Doping Layer in CIGS Thin-film Solar Cells: a Photoluminescence Study.” JOURNAL OF PHYSICS D-APPLIED PHYSICS 47.4 (2014): n. pag. Print.
@article{4224806,
  abstract     = {Sb doping of Cu(In,Ga)Se2 (CIGS) solar cells has been reported to exhibit a positive effect on the morphology of the absorber layer, offering a possibility to lower manufacturing cost by lowering the annealing temperatures during the CIGS deposition. In this work electron microscopy, energy-dispersive x-ray spectroscopy and photoluminescence experiments have been performed on cells deposited on soda-lime glass substrates, adding a thin Sb layer onto the Mo back contact prior to the CIGS absorber deposition. The defect structure of CIGS solar cells doped with Sb in this way has been investigated and is compared with that of undoped reference cells. The influence of substrate temperature during absorber growth has also been evaluated. For all samples the photoluminescence results can be explained by considering three donor--acceptor pair recombination processes involving the same defect pairs.},
  articleno    = {045102},
  author       = {Van Puyvelde, Lisanne and Lauwaert, Johan and Pianezzi, F and Nishiwaki, S and Smet, Philippe and Poelman, Dirk and Tiwari, AN and Vrielinck, Henk},
  issn         = {0022-3727},
  journal      = {JOURNAL OF PHYSICS D-APPLIED PHYSICS},
  keyword      = {Photoluminescence,Cu(ln\_Ga)Se2,TEMPERATURE,SEMICONDUCTOR,Defects,GROWTH},
  language     = {eng},
  number       = {4},
  pages        = {8},
  title        = {Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study},
  url          = {http://dx.doi.org/10.1088/0022-3727/47/4/045102},
  volume       = {47},
  year         = {2014},
}

Altmetric
View in Altmetric
Web of Science
Times cited: