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Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study

Lisanne Van Puyvelde, Johan Lauwaert UGent, F Pianezzi, S Nishiwaki, Philippe Smet UGent, Dirk Poelman UGent, AN Tiwari and Henk Vrielinck UGent (2014) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 47(4).
abstract
Sb doping of Cu(In,Ga)Se2 (CIGS) solar cells has been reported to exhibit a positive effect on the morphology of the absorber layer, offering a possibility to lower manufacturing cost by lowering the annealing temperatures during the CIGS deposition. In this work electron microscopy, energy-dispersive x-ray spectroscopy and photoluminescence experiments have been performed on cells deposited on soda-lime glass substrates, adding a thin Sb layer onto the Mo back contact prior to the CIGS absorber deposition. The defect structure of CIGS solar cells doped with Sb in this way has been investigated and is compared with that of undoped reference cells. The influence of substrate temperature during absorber growth has also been evaluated. For all samples the photoluminescence results can be explained by considering three donor–acceptor pair recombination processes involving the same defect pairs.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
Photoluminescence, Cu(ln_Ga)Se2, TEMPERATURE, SEMICONDUCTOR, Defects, GROWTH
journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
J. Phys. D-Appl. Phys.
volume
47
issue
4
article number
045102
pages
8 pages
Web of Science type
Article
Web of Science id
000329624900007
JCR category
PHYSICS, APPLIED
JCR impact factor
2.721 (2014)
JCR rank
27/144 (2014)
JCR quartile
1 (2014)
ISSN
0022-3727
DOI
10.1088/0022-3727/47/4/045102
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
4224806
handle
http://hdl.handle.net/1854/LU-4224806
date created
2014-01-08 12:01:19
date last changed
2016-12-21 15:42:01
@article{4224806,
  abstract     = {Sb doping of Cu(In,Ga)Se2 (CIGS) solar cells has been reported to exhibit a positive effect on the morphology of the absorber layer, offering a possibility to lower manufacturing cost by lowering the annealing temperatures during the CIGS deposition. In this work electron microscopy, energy-dispersive x-ray spectroscopy and photoluminescence experiments have been performed on cells deposited on soda-lime glass substrates, adding a thin Sb layer onto the Mo back contact prior to the CIGS absorber deposition. The defect structure of CIGS solar cells doped with Sb in this way has been investigated and is compared with that of undoped reference cells. The influence of substrate temperature during absorber growth has also been evaluated. For all samples the photoluminescence results can be explained by considering three donor--acceptor pair recombination processes involving the same defect pairs.},
  articleno    = {045102},
  author       = {Van Puyvelde, Lisanne and Lauwaert, Johan and Pianezzi, F and Nishiwaki, S and Smet, Philippe and Poelman, Dirk and Tiwari, AN and Vrielinck, Henk},
  issn         = {0022-3727},
  journal      = {JOURNAL OF PHYSICS D-APPLIED PHYSICS},
  keyword      = {Photoluminescence,Cu(ln\_Ga)Se2,TEMPERATURE,SEMICONDUCTOR,Defects,GROWTH},
  language     = {eng},
  number       = {4},
  pages        = {8},
  title        = {Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study},
  url          = {http://dx.doi.org/10.1088/0022-3727/47/4/045102},
  volume       = {47},
  year         = {2014},
}

Chicago
Van Puyvelde, Lisanne, Johan Lauwaert, F Pianezzi, S Nishiwaki, Philippe Smet, Dirk Poelman, AN Tiwari, and Henk Vrielinck. 2014. “Influence of an Sb Doping Layer in CIGS Thin-film Solar Cells: a Photoluminescence Study.” Journal of Physics D-applied Physics 47 (4).
APA
Van Puyvelde, Lisanne, Lauwaert, J., Pianezzi, F., Nishiwaki, S., Smet, P., Poelman, D., Tiwari, A., et al. (2014). Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 47(4).
Vancouver
1.
Van Puyvelde L, Lauwaert J, Pianezzi F, Nishiwaki S, Smet P, Poelman D, et al. Influence of an Sb doping layer in CIGS thin-film solar cells: a photoluminescence study. JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2014;47(4).
MLA
Van Puyvelde, Lisanne, Johan Lauwaert, F Pianezzi, et al. “Influence of an Sb Doping Layer in CIGS Thin-film Solar Cells: a Photoluminescence Study.” JOURNAL OF PHYSICS D-APPLIED PHYSICS 47.4 (2014): n. pag. Print.