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Compact modeling of lateral nonuniform doping in high-voltage MOSFETs

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MLA
CHAUHAN, YS, F KRUMMENACHER, R GILLON, et al. “Compact Modeling of Lateral Nonuniform Doping in High-voltage MOSFETs.” IEEE TRANSACTIONS ON ELECTRON DEVICES 54.6 (2007): 1527–1539. Print.
APA
CHAUHAN, YS, KRUMMENACHER, F., GILLON, R., Bakeroot, B., DECLERCQ, M., & IONESCU, A. (2007). Compact modeling of lateral nonuniform doping in high-voltage MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 54(6), 1527–1539.
Chicago author-date
CHAUHAN, YS, F KRUMMENACHER, R GILLON, Benoit Bakeroot, MJ DECLERCQ, and AM IONESCU. 2007. “Compact Modeling of Lateral Nonuniform Doping in High-voltage MOSFETs.” Ieee Transactions on Electron Devices 54 (6): 1527–1539.
Chicago author-date (all authors)
CHAUHAN, YS, F KRUMMENACHER, R GILLON, Benoit Bakeroot, MJ DECLERCQ, and AM IONESCU. 2007. “Compact Modeling of Lateral Nonuniform Doping in High-voltage MOSFETs.” Ieee Transactions on Electron Devices 54 (6): 1527–1539.
Vancouver
1.
CHAUHAN Y, KRUMMENACHER F, GILLON R, Bakeroot B, DECLERCQ M, IONESCU A. Compact modeling of lateral nonuniform doping in high-voltage MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2007;54(6):1527–39.
IEEE
[1]
Y. CHAUHAN, F. KRUMMENACHER, R. GILLON, B. Bakeroot, M. DECLERCQ, and A. IONESCU, “Compact modeling of lateral nonuniform doping in high-voltage MOSFETs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 54, no. 6, pp. 1527–1539, 2007.
@article{419742,
  author       = {CHAUHAN, YS and KRUMMENACHER, F and GILLON, R and Bakeroot, Benoit and DECLERCQ, MJ and IONESCU, AM},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  language     = {eng},
  number       = {6},
  pages        = {1527--1539},
  title        = {Compact modeling of lateral nonuniform doping in high-voltage MOSFETs},
  volume       = {54},
  year         = {2007},
}

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