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Low temperature atomic layer deposition of platinum using (methylcyclopentadienyl)trimethylplatinum and ozone

(2013) JOURNAL OF PHYSICAL CHEMISTRY C. 117(40). p.20557-20561
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Abstract
Thermal atomic layer deposition (ALD) of platinum is usually achieved using molecular oxygen as the reactant gas and deposition temperatures in the 250-300 degrees C range. In this work, crystalline thin films of metallic Pt have been grown by ALD at temperatures as low as 100 degrees C using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) as the Pt precursor and ozone as the reactant gas. The novel process is characterized by a constant growth rate of 0.45 angstrom per cycle within the 100-300 degrees C temperature window. The Pt films are uniform with low impurity levels and close-to-bulk resistivities even at the lowest deposition temperature. We show that the initial growth on SiO2 surfaces is nucleation-controlled and islandlike and demonstrate the good conformality of the low-temperature ALD process by Pt deposition on anodic alumina nanopores and mesoporous silica thin films.
Keywords
ELLIPSOMETRIC POROSIMETRY, THIN-FILMS, FUEL-CELLS, GROWTH, OXIDE, NANOPARTICLES, NUCLEATION, RUTHENIUM, TIO2, ALD

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Citation

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Chicago
Dendooven, Jolien, Ranjith K Ramanchandran, Kilian Devloo-Casier, Geert Rampelberg, Matthias Filez, Hilde Poelman, Guy Marin, Emiliano Fonda, and Christophe Detavernier. 2013. “Low Temperature Atomic Layer Deposition of Platinum Using (methylcyclopentadienyl)trimethylplatinum and Ozone.” Journal of Physical Chemistry C 117 (40): 20557–20561.
APA
Dendooven, J., Ramanchandran, R. K., Devloo-Casier, K., Rampelberg, G., Filez, M., Poelman, H., Marin, G., et al. (2013). Low temperature atomic layer deposition of platinum using (methylcyclopentadienyl)trimethylplatinum and ozone. JOURNAL OF PHYSICAL CHEMISTRY C, 117(40), 20557–20561.
Vancouver
1.
Dendooven J, Ramanchandran RK, Devloo-Casier K, Rampelberg G, Filez M, Poelman H, et al. Low temperature atomic layer deposition of platinum using (methylcyclopentadienyl)trimethylplatinum and ozone. JOURNAL OF PHYSICAL CHEMISTRY C. 2013;117(40):20557–61.
MLA
Dendooven, Jolien, Ranjith K Ramanchandran, Kilian Devloo-Casier, et al. “Low Temperature Atomic Layer Deposition of Platinum Using (methylcyclopentadienyl)trimethylplatinum and Ozone.” JOURNAL OF PHYSICAL CHEMISTRY C 117.40 (2013): 20557–20561. Print.
@article{4187206,
  abstract     = {Thermal atomic layer deposition (ALD) of platinum is usually achieved using molecular oxygen as the reactant gas and deposition temperatures in the 250-300 degrees C range. In this work, crystalline thin films of metallic Pt have been grown by ALD at temperatures as low as 100 degrees C using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) as the Pt precursor and ozone as the reactant gas. The novel process is characterized by a constant growth rate of 0.45 angstrom per cycle within the 100-300 degrees C temperature window. The Pt films are uniform with low impurity levels and close-to-bulk resistivities even at the lowest deposition temperature. We show that the initial growth on SiO2 surfaces is nucleation-controlled and islandlike and demonstrate the good conformality of the low-temperature ALD process by Pt deposition on anodic alumina nanopores and mesoporous silica thin films.},
  author       = {Dendooven, Jolien and Ramanchandran, Ranjith K and Devloo-Casier, Kilian and Rampelberg, Geert and Filez, Matthias and Poelman, Hilde and Marin, Guy and Fonda, Emiliano and Detavernier, Christophe},
  issn         = {1932-7447},
  journal      = {JOURNAL OF PHYSICAL CHEMISTRY C},
  keywords     = {ELLIPSOMETRIC POROSIMETRY,THIN-FILMS,FUEL-CELLS,GROWTH,OXIDE,NANOPARTICLES,NUCLEATION,RUTHENIUM,TIO2,ALD},
  language     = {eng},
  number       = {40},
  pages        = {20557--20561},
  title        = {Low temperature atomic layer deposition of platinum using (methylcyclopentadienyl)trimethylplatinum and ozone},
  url          = {http://dx.doi.org/10.1021/jp403455a},
  volume       = {117},
  year         = {2013},
}

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