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The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

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MLA
SIMOEN, E, C CLAEYS, R JOB, et al. “The Behaviour of Oxygen in Oxygenated N-type High Resistivity Float-Zone Silicon.” SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 2002.2 (2002): 912–924. Print.
APA
SIMOEN, E., CLAEYS, C., JOB, R., ULYASHIN, A., FAHRNER, W., TONELLI, G., De Gryse, O., et al. (2002). The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon. SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2, 2002(2), 912–924.
Chicago author-date
SIMOEN, E, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse, and Paul Clauws. 2002. “The Behaviour of Oxygen in Oxygenated N-type High Resistivity Float-Zone Silicon.” SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 2002 (2): 912–924.
Chicago author-date (all authors)
SIMOEN, E, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse, and Paul Clauws. 2002. “The Behaviour of Oxygen in Oxygenated N-type High Resistivity Float-Zone Silicon.” SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 2002 (2): 912–924.
Vancouver
1.
SIMOEN E, CLAEYS C, JOB R, ULYASHIN A, FAHRNER W, TONELLI G, et al. The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon. SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2. 2002;2002(2):912–24.
IEEE
[1]
E. SIMOEN et al., “The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon,” SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2, vol. 2002, no. 2, pp. 912–924, 2002.
@article{414864,
  author       = {SIMOEN, E and CLAEYS, C and JOB, R and ULYASHIN, AG and FAHRNER, WR and TONELLI, G and De Gryse, Olivier and Clauws, Paul},
  journal      = {SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2},
  language     = {eng},
  number       = {2},
  pages        = {912--924},
  title        = {The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon},
  volume       = {2002},
  year         = {2002},
}

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