The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon
- Author
- E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse and Paul Clauws (UGent)
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-414864
- MLA
- SIMOEN, E, C CLAEYS, R JOB, et al. “The Behaviour of Oxygen in Oxygenated N-type High Resistivity Float-Zone Silicon.” SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 2002.2 (2002): 912–924. Print.
- APA
- SIMOEN, E., CLAEYS, C., JOB, R., ULYASHIN, A., FAHRNER, W., TONELLI, G., De Gryse, O., et al. (2002). The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon. SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2, 2002(2), 912–924.
- Chicago author-date
- SIMOEN, E, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse, and Paul Clauws. 2002. “The Behaviour of Oxygen in Oxygenated N-type High Resistivity Float-Zone Silicon.” SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 2002 (2): 912–924.
- Chicago author-date (all authors)
- SIMOEN, E, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse, and Paul Clauws. 2002. “The Behaviour of Oxygen in Oxygenated N-type High Resistivity Float-Zone Silicon.” SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 2002 (2): 912–924.
- Vancouver
- 1.SIMOEN E, CLAEYS C, JOB R, ULYASHIN A, FAHRNER W, TONELLI G, et al. The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon. SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2. 2002;2002(2):912–24.
- IEEE
- [1]E. SIMOEN et al., “The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon,” SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2, vol. 2002, no. 2, pp. 912–924, 2002.
@article{414864,
author = {SIMOEN, E and CLAEYS, C and JOB, R and ULYASHIN, AG and FAHRNER, WR and TONELLI, G and De Gryse, Olivier and Clauws, Paul},
journal = {SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2},
language = {eng},
number = {2},
pages = {912--924},
title = {The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon},
volume = {2002},
year = {2002},
}