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Formation energy of intrinsic point defects in Si and Ge and implications for Ge crystal growth

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VACANCY, RECONSTRUCTION, GERMANIUM, SILICON, SI(001) SURFACE, AB-INITIO, DENSITY-FUNCTIONAL THEORY, SEMICONDUCTORS, TRANSITION, SCHEMES

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Chicago
Kamiyama, Eiji, Koji Sueoka, and Jan Vanhellemont. 2013. “Formation Energy of Intrinsic Point Defects in Si and Ge and Implications for Ge Crystal Growth.” Ecs Journal of Solid State Science and Technology 2 (3): P104–P109.
APA
Kamiyama, Eiji, Sueoka, K., & Vanhellemont, J. (2013). Formation energy of intrinsic point defects in Si and Ge and implications for Ge crystal growth. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2(3), P104–P109.
Vancouver
1.
Kamiyama E, Sueoka K, Vanhellemont J. Formation energy of intrinsic point defects in Si and Ge and implications for Ge crystal growth. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2013;2(3):P104–P109.
MLA
Kamiyama, Eiji, Koji Sueoka, and Jan Vanhellemont. “Formation Energy of Intrinsic Point Defects in Si and Ge and Implications for Ge Crystal Growth.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 2.3 (2013): P104–P109. Print.
@article{4111618,
  author       = {Kamiyama, Eiji and Sueoka, Koji and Vanhellemont, Jan},
  issn         = {2162-8769},
  journal      = {ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY},
  keywords     = {VACANCY,RECONSTRUCTION,GERMANIUM,SILICON,SI(001) SURFACE,AB-INITIO,DENSITY-FUNCTIONAL THEORY,SEMICONDUCTORS,TRANSITION,SCHEMES},
  language     = {eng},
  number       = {3},
  pages        = {P104--P109},
  title        = {Formation energy of intrinsic point defects in Si and Ge and implications for Ge crystal growth},
  url          = {http://dx.doi.org/10.1149/2.002304jss},
  volume       = {2},
  year         = {2013},
}

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