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P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon

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MLA
HUANG, YL, E SIMOEN, R JOB, et al. “P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-type Czochralski Silicon.” SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES 864 (2005): 307–312. Print.
APA
HUANG, YL, SIMOEN, E., JOB, R., CLAEYS, C., DUNGEN, W., MA, Y., FAHRNER, W., et al. (2005). P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon. SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES, 864, 307–312.
Chicago author-date
HUANG, YL, E SIMOEN, R JOB, C CLAEYS, W DUNGEN, Y MA, WR FAHRNER, Jorg Versluys, and Paul Clauws. 2005. “P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-type Czochralski Silicon.” Semiconductor Defect Engineering-materials, Synthetic Structures and Devices 864: 307–312.
Chicago author-date (all authors)
HUANG, YL, E SIMOEN, R JOB, C CLAEYS, W DUNGEN, Y MA, WR FAHRNER, Jorg Versluys, and Paul Clauws. 2005. “P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-type Czochralski Silicon.” Semiconductor Defect Engineering-materials, Synthetic Structures and Devices 864: 307–312.
Vancouver
1.
HUANG Y, SIMOEN E, JOB R, CLAEYS C, DUNGEN W, MA Y, et al. P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon. SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES. 2005;864:307–12.
IEEE
[1]
Y. HUANG et al., “P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon,” SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES, vol. 864, pp. 307–312, 2005.
@article{410754,
  author       = {HUANG, YL and SIMOEN, E and JOB, R and CLAEYS, C and DUNGEN, W and MA, Y and FAHRNER, WR and Versluys, Jorg and Clauws, Paul},
  issn         = {0272-9172},
  journal      = {SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES},
  language     = {eng},
  pages        = {307--312},
  title        = {P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon},
  volume       = {864},
  year         = {2005},
}

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