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Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties

(2013) JOURNAL OF MATERIALS CHEMISTRY C. 1(25). p.3961-3966
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Organization
Abstract
In this contribution, we present sealed ultra low-k organosilica films that have improved electrical, mechanical and chemical properties. The films consist of a mesoporous ethylene-bridged organosilica layer at the bottom and an almost non-porous cyclic carbon-bridged top layer. This top layer effectively seals metal penetration during atomic layer deposition processes. Furthermore, by applying this sealing approach we can lower the dielectric constant of the pristine mesoporous film from 2.5 to 2.07 while we can also lower the leakage current and improve the mechanical and chemical stability.
Keywords
ATOMIC LAYER DEPOSITION, DIELECTRIC-CONSTANT MATERIALS, ELLIPSOMETRIC POROSIMETRY, BARRIER LAYER, SILICA, INTERCONNECTS, INTEGRATION, CHALLENGES, RESISTANCE, IMPACT

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Citation

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Chicago
Goethals, Frederik, Elisabeth Levrau, Glenn Pollefeyt, Mikhail R Baklanov, Ivan Ciofi, Kris Vanstreels, Christophe Detavernier, Isabel Van Driessche, and Pascal Van Der Voort. 2013. “Sealed Ultra Low-k Organosilica Films with Improved Electrical, Mechanical and Chemical Properties.” Journal of Materials Chemistry C 1 (25): 3961–3966.
APA
Goethals, Frederik, Levrau, E., Pollefeyt, G., Baklanov, M. R., Ciofi, I., Vanstreels, K., Detavernier, C., et al. (2013). Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties. JOURNAL OF MATERIALS CHEMISTRY C, 1(25), 3961–3966.
Vancouver
1.
Goethals F, Levrau E, Pollefeyt G, Baklanov MR, Ciofi I, Vanstreels K, et al. Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties. JOURNAL OF MATERIALS CHEMISTRY C. 2013;1(25):3961–6.
MLA
Goethals, Frederik, Elisabeth Levrau, Glenn Pollefeyt, et al. “Sealed Ultra Low-k Organosilica Films with Improved Electrical, Mechanical and Chemical Properties.” JOURNAL OF MATERIALS CHEMISTRY C 1.25 (2013): 3961–3966. Print.
@article{4099642,
  abstract     = {In this contribution, we present sealed ultra low-k organosilica films that have improved electrical, mechanical and chemical properties. The films consist of a mesoporous ethylene-bridged organosilica layer at the bottom and an almost non-porous cyclic carbon-bridged top layer. This top layer effectively seals metal penetration during atomic layer deposition processes. Furthermore, by applying this sealing approach we can lower the dielectric constant of the pristine mesoporous film from 2.5 to 2.07 while we can also lower the leakage current and improve the mechanical and chemical stability.},
  author       = {Goethals, Frederik and Levrau, Elisabeth and Pollefeyt, Glenn and Baklanov, Mikhail R and Ciofi, Ivan and Vanstreels, Kris and Detavernier, Christophe and Van Driessche, Isabel and Van Der Voort, Pascal},
  issn         = {2050-7526},
  journal      = {JOURNAL OF MATERIALS CHEMISTRY C},
  keyword      = {ATOMIC LAYER DEPOSITION,DIELECTRIC-CONSTANT MATERIALS,ELLIPSOMETRIC POROSIMETRY,BARRIER LAYER,SILICA,INTERCONNECTS,INTEGRATION,CHALLENGES,RESISTANCE,IMPACT},
  language     = {eng},
  number       = {25},
  pages        = {3961--3966},
  title        = {Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties},
  url          = {http://dx.doi.org/10.1039/c3tc30522h},
  volume       = {1},
  year         = {2013},
}

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