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Influence of Al doping on the bandgap of TiOx

Bert Braeckman (UGent) , Francis Boydens (UGent) and Diederik Depla (UGent)
(2013) BELVAC NEWS. 29(3). p.1-6
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Abstract
Al doped TiOx thin films were deposited using Ti targets with Al inserts. Both the effect of the number of aluminium inserts and the discharge current on the discharge voltage, on the aluminium content in the thin films, and on the reactive sputtering behaviour was investigated. The aluminium content in the film was measured using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDX). X-ray diffraction (XRD) revealed that the as-deposited thin films were amorphous, independent of the aluminium content or the discharge current. The XPS results indicated that the oxide films were substoichiometric. The optical band gap of the Ti(Al)Ox thin films was investigated as a function of the aluminium concentration and the discharge current. The addition of aluminium results in a significant increase of the band gap at low discharge currents, while no significant influence on the band gap was found at higher currents.

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Citation

Please use this url to cite or link to this publication:

MLA
Braeckman, Bert, Francis Boydens, and Diederik Depla. “Influence of Al Doping on the Bandgap of TiOx.” BELVAC NEWS 29.3 (2013): 1–6. Print.
APA
Braeckman, Bert, Boydens, F., & Depla, D. (2013). Influence of Al doping on the bandgap of TiOx. BELVAC NEWS, 29(3), 1–6.
Chicago author-date
Braeckman, Bert, Francis Boydens, and Diederik Depla. 2013. “Influence of Al Doping on the Bandgap of TiOx.” Belvac News 29 (3): 1–6.
Chicago author-date (all authors)
Braeckman, Bert, Francis Boydens, and Diederik Depla. 2013. “Influence of Al Doping on the Bandgap of TiOx.” Belvac News 29 (3): 1–6.
Vancouver
1.
Braeckman B, Boydens F, Depla D. Influence of Al doping on the bandgap of TiOx. BELVAC NEWS. 2013;29(3):1–6.
IEEE
[1]
B. Braeckman, F. Boydens, and D. Depla, “Influence of Al doping on the bandgap of TiOx,” BELVAC NEWS, vol. 29, no. 3, pp. 1–6, 2013.
@article{4095248,
  abstract     = {Al doped TiOx thin films were deposited using Ti targets with Al inserts. Both the effect of the number of aluminium inserts and the discharge current on the discharge voltage, on the aluminium content in the thin films, and on the reactive sputtering behaviour was investigated. The aluminium content in the film was measured using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDX). X-ray diffraction (XRD) revealed that the as-deposited thin films were amorphous, independent of the aluminium content or the discharge current. The XPS results indicated that the oxide films were substoichiometric. The optical band gap of the Ti(Al)Ox thin films was investigated as a function of the aluminium concentration and the discharge current. The addition of aluminium results in a significant increase of the band gap at low discharge currents, while no significant influence on the band gap was found at higher currents.},
  author       = {Braeckman, Bert and Boydens, Francis and Depla, Diederik},
  issn         = {0773-8838},
  journal      = {BELVAC NEWS},
  language     = {eng},
  number       = {3},
  pages        = {1--6},
  title        = {Influence of Al doping on the bandgap of TiOx},
  volume       = {29},
  year         = {2013},
}