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4mW micro cavity LED at 650nm on germanium substrates.

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Abstract
We report on the realisation of red micro cavity ZED's on germanium substrates, offering a significant cost advantage compared to GaAs wafers. The MCLED structure,grown by LP-MOVPE, consists of 3 GaInP quantum wells within a (detuned) 1-lambda AlGaInP cavity, enclosed by Al95GaAs/Al55GaAs DBR's, with a current spreading layer on top. MCLED's with a 200 mu m aperture, exhibit a quantum efficiency up to 4.35% (at 10 mA) and an optical power higher than 4 mW (at 80 mA), without any packaging. The optical spectrum was centered at 650 nm with a FWHM of +/- 13 nm. Because of the detuning the opening angle of these structures was as much as 120 degrees. Rudimentary packaging resulted in a luminous intensity of 2.5 cd at 30 mA, with an opening angle of +/- 30. Initially the electrical performance was not optimal, but additional tests and a new processing have indicated that forward biases as low as 2.0 V (at 20 mA) can be obtained for LED's on Ge-substrates. The new processing further resulted in an improved optical output with 5 dmW at 80 mA. We feel there is room for further improvement, but already we have demonstrated the feasibility of germanium substrates for commercial red (to orange/yellow) LED applications.
Keywords
HETEROSTRUCTURES, EPITAXY, GE, GAAS, GaInP, AlGaInP, light emitting diode, LED, micro cavity, germanium, Ge

Citation

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MLA
D’Hondt, Mark, et al. “4mW Micro Cavity LED at 650nm on Germanium Substrates.” Proceedings of SPIE, the International Society for Optical Engineering, edited by H Walter Yao et al., vol. 3938, SPIE, the International Society for Optical Engineering, 2000, pp. 196–204, doi:10.1117/12.382838.
APA
D’Hondt, M., Modak, P., Delbeke, D., Moerman, I., Van Daele, P., Baets, R., … Mijlemans, P. (2000). 4mW micro cavity LED at 650nm on germanium substrates. In H. W. Yao, I. T. Ferguson, & E. Schubert (Eds.), Proceedings of SPIE, the International Society for Optical Engineering (Vol. 3938, pp. 196–204). Bellingham, WA, USA: SPIE, the International Society for Optical Engineering. https://doi.org/10.1117/12.382838
Chicago author-date
D’Hondt, Mark, Prasanta Modak, Danaë Delbeke, Ingrid Moerman, Peter Van Daele, Roel Baets, Piet Demeester, and Paul Mijlemans. 2000. “4mW Micro Cavity LED at 650nm on Germanium Substrates.” In Proceedings of SPIE, the International Society for Optical Engineering, edited by H Walter Yao, Ian T Ferguson, and EF Schubert, 3938:196–204. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering. https://doi.org/10.1117/12.382838.
Chicago author-date (all authors)
D’Hondt, Mark, Prasanta Modak, Danaë Delbeke, Ingrid Moerman, Peter Van Daele, Roel Baets, Piet Demeester, and Paul Mijlemans. 2000. “4mW Micro Cavity LED at 650nm on Germanium Substrates.” In Proceedings of SPIE, the International Society for Optical Engineering, ed by. H Walter Yao, Ian T Ferguson, and EF Schubert, 3938:196–204. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering. doi:10.1117/12.382838.
Vancouver
1.
D’Hondt M, Modak P, Delbeke D, Moerman I, Van Daele P, Baets R, et al. 4mW micro cavity LED at 650nm on germanium substrates. In: Yao HW, Ferguson IT, Schubert E, editors. Proceedings of SPIE, the International Society for Optical Engineering. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering; 2000. p. 196–204.
IEEE
[1]
M. D’Hondt et al., “4mW micro cavity LED at 650nm on germanium substrates.,” in Proceedings of SPIE, the International Society for Optical Engineering, San José, CA, USA, 2000, vol. 3938, pp. 196–204.
@inproceedings{409330,
  abstract     = {We report on the realisation of red micro cavity ZED's on germanium substrates, offering a significant cost advantage compared to GaAs wafers. The MCLED structure,grown by LP-MOVPE, consists of 3 GaInP quantum wells within a (detuned) 1-lambda AlGaInP cavity, enclosed by Al95GaAs/Al55GaAs DBR's, with a current spreading layer on top. MCLED's with a 200 mu m aperture, exhibit a quantum efficiency up to 4.35% (at 10 mA) and an optical power higher than 4 mW (at 80 mA), without any packaging. The optical spectrum was centered at 650 nm with a FWHM of +/- 13 nm. Because of the detuning the opening angle of these structures was as much as 120 degrees. Rudimentary packaging resulted in a luminous intensity of 2.5 cd at 30 mA, with an opening angle of +/- 30. Initially the electrical performance was not optimal, but additional tests and a new processing have indicated that forward biases as low as 2.0 V (at 20 mA) can be obtained for LED's on Ge-substrates. The new processing further resulted in an improved optical output with 5 dmW at 80 mA. We feel there is room for further improvement, but already we have demonstrated the feasibility of germanium substrates for commercial red (to orange/yellow) LED applications.},
  author       = {D'Hondt, Mark and Modak, Prasanta and Delbeke, Danaë and Moerman, Ingrid and Van Daele, Peter and Baets, Roel and Demeester, Piet and Mijlemans, Paul},
  booktitle    = {Proceedings of SPIE, the International Society for Optical Engineering},
  editor       = {Yao, H Walter and Ferguson, Ian T and Schubert, EF},
  isbn         = {9780819435552},
  issn         = {0277-786X},
  keywords     = {HETEROSTRUCTURES,EPITAXY,GE,GAAS,GaInP,AlGaInP,light emitting diode,LED,micro cavity,germanium,Ge},
  language     = {eng},
  location     = {San José, CA, USA},
  pages        = {196--204},
  publisher    = {SPIE, the International Society for Optical Engineering},
  title        = {4mW micro cavity LED at 650nm on germanium substrates.},
  url          = {http://dx.doi.org/10.1117/12.382838},
  volume       = {3938},
  year         = {2000},
}

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