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Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence.

(1998) NITRIDE SEMICONDUCTORS. 482. p.715-718
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MLA
TRAGER-COWAN, C, PG MIDDLETON, A MOHAMMED, et al. “Probing the Indium Mole Fraction in an InGaN Epilayer by Depth Resolved Cathodoluminescence.” NITRIDE SEMICONDUCTORS 482 (1998): 715–718. Print.
APA
TRAGER-COWAN, C., MIDDLETON, P., MOHAMMED, A., O’DONNELL, K., Van Der Stricht, W., Moerman, I., & Demeester, P. (1998). Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence. NITRIDE SEMICONDUCTORS, 482, 715–718.
Chicago author-date
TRAGER-COWAN, C, PG MIDDLETON, A MOHAMMED, KP O’DONNELL, Wim Van Der Stricht, Ingrid Moerman, and Piet Demeester. 1998. “Probing the Indium Mole Fraction in an InGaN Epilayer by Depth Resolved Cathodoluminescence.” Nitride Semiconductors 482: 715–718.
Chicago author-date (all authors)
TRAGER-COWAN, C, PG MIDDLETON, A MOHAMMED, KP O’DONNELL, Wim Van Der Stricht, Ingrid Moerman, and Piet Demeester. 1998. “Probing the Indium Mole Fraction in an InGaN Epilayer by Depth Resolved Cathodoluminescence.” Nitride Semiconductors 482: 715–718.
Vancouver
1.
TRAGER-COWAN C, MIDDLETON P, MOHAMMED A, O’DONNELL K, Van Der Stricht W, Moerman I, et al. Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence. NITRIDE SEMICONDUCTORS. 1998;482:715–8.
IEEE
[1]
C. TRAGER-COWAN et al., “Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence.,” NITRIDE SEMICONDUCTORS, vol. 482, pp. 715–718, 1998.
@article{409323,
  author       = {TRAGER-COWAN, C and MIDDLETON, PG and MOHAMMED, A and O'DONNELL, KP and Van Der Stricht, Wim and Moerman, Ingrid and Demeester, Piet},
  issn         = {0272-9172},
  journal      = {NITRIDE SEMICONDUCTORS},
  language     = {eng},
  pages        = {715--718},
  title        = {Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence.},
  volume       = {482},
  year         = {1998},
}

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