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The role of lattice mismatch and kinetics in texture development: Co1-xNixSi2 thin films on Si(100)

D SMEETS, A VANTOMME, Koen De Keyser UGent, Christophe Detavernier UGent and C LAVOIE (2008) JOURNAL OF APPLIED PHYSICS. 103(6).
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
JOURNAL OF APPLIED PHYSICS
J. Appl. Phys.
volume
103
issue
6
Web of Science type
Article
Web of Science id
000254536900022
JCR category
PHYSICS, APPLIED
JCR impact factor
2.201 (2008)
JCR rank
21/95 (2008)
JCR quartile
1 (2008)
ISSN
0021-8979
language
English
UGent publication?
yes
classification
A1
id
408840
handle
http://hdl.handle.net/1854/LU-408840
date created
2008-05-15 11:41:00
date last changed
2016-12-19 15:43:05
@article{408840,
  author       = {SMEETS, D and VANTOMME, A and De Keyser, Koen and Detavernier, Christophe and LAVOIE, C},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  language     = {eng},
  number       = {6},
  title        = {The role of lattice mismatch and kinetics in texture development: Co1-xNixSi2 thin films on Si(100)},
  volume       = {103},
  year         = {2008},
}

Chicago
SMEETS, D, A VANTOMME, Koen De Keyser, Christophe Detavernier, and C LAVOIE. 2008. “The Role of Lattice Mismatch and Kinetics in Texture Development: Co1-xNixSi2 Thin Films on Si(100).” Journal of Applied Physics 103 (6).
APA
SMEETS, D., VANTOMME, A., De Keyser, K., Detavernier, C., & LAVOIE, C. (2008). The role of lattice mismatch and kinetics in texture development: Co1-xNixSi2 thin films on Si(100). JOURNAL OF APPLIED PHYSICS, 103(6).
Vancouver
1.
SMEETS D, VANTOMME A, De Keyser K, Detavernier C, LAVOIE C. The role of lattice mismatch and kinetics in texture development: Co1-xNixSi2 thin films on Si(100). JOURNAL OF APPLIED PHYSICS. 2008;103(6).
MLA
SMEETS, D, A VANTOMME, Koen De Keyser, et al. “The Role of Lattice Mismatch and Kinetics in Texture Development: Co1-xNixSi2 Thin Films on Si(100).” JOURNAL OF APPLIED PHYSICS 103.6 (2008): n. pag. Print.