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Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth

(2007) NANOTECHNOLOGY. 18(50).
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Chicago
IACOPI, F, PM VEREECKEN, M SCHAEKERS, M CAYMAX, N MOELANS, B BLANPAIN, O RICHARD, Christophe Detavernier, and H GRIFFITHS. 2007. “Plasma-enhanced Chemical Vapour Deposition Growth of Si Nanowires with Low Melting Point Metal Catalysts: An Effective Alternative to Au-mediated Growth.” Nanotechnology 18 (50).
APA
IACOPI, F., VEREECKEN, P., SCHAEKERS, M., CAYMAX, M., MOELANS, N., BLANPAIN, B., RICHARD, O., et al. (2007). Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth. NANOTECHNOLOGY, 18(50).
Vancouver
1.
IACOPI F, VEREECKEN P, SCHAEKERS M, CAYMAX M, MOELANS N, BLANPAIN B, et al. Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth. NANOTECHNOLOGY. 2007;18(50).
MLA
IACOPI, F, PM VEREECKEN, M SCHAEKERS, et al. “Plasma-enhanced Chemical Vapour Deposition Growth of Si Nanowires with Low Melting Point Metal Catalysts: An Effective Alternative to Au-mediated Growth.” NANOTECHNOLOGY 18.50 (2007): n. pag. Print.
@article{408831,
  author       = {IACOPI, F and VEREECKEN, PM and SCHAEKERS, M and CAYMAX, M and MOELANS, N and BLANPAIN, B and RICHARD, O and Detavernier, Christophe and GRIFFITHS, H},
  issn         = {0957-4484},
  journal      = {NANOTECHNOLOGY},
  language     = {eng},
  number       = {50},
  title        = {Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth},
  volume       = {18},
  year         = {2007},
}

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