Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices
- Author
- Koen Vanhollebeke, J Nica, Ingrid Moerman (UGent) and Peter Van Daele (UGent)
- Organization
- Abstract
- Thin pseudomorphic InAs0.25P0.75 layers were grown by Metal Organic Vapor Phase Epitaxy (MOVPE) onto InP and subsequently successfully transferred to InP and Ge host substrates through direct bonding. Through in plane angular misalignment InAsyP1-y twist bonded compliant substrates were fabricated. The resulting substrates were analyzed using XRD, revealing important differences between using different host substrates. Lattice-mismatched In1-xGaxAs layers were grown onto these InAsP twist bonded compliant substrates by MOVPE. The lattice-mismatched InGaAs layers were analyzed using photoluminescence (PL) and X-ray diffraction (XRD) and compared to deposition onto InP substrates. Results indicate that the resulting InAsP TB compliant substrates can be used for the realization of low-defect density lattice-mismatched classically InP-based devices.
- Keywords
- LAYERS
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-401923
- MLA
- Vanhollebeke, Koen, et al. “Realization of InAsP Compliant Substrates for the Fabrication of Lattice-Mismatched InP-Based Devices.” Conference Proceedings : Indium Phosphide and Related Materials, IEEE, 2001, pp. 299–302, doi:10.1109/ICIPRM.2001.929117.
- APA
- Vanhollebeke, K., Nica, J., Moerman, I., & Van Daele, P. (2001). Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices. Conference Proceedings : Indium Phosphide and Related Materials, 299–302. https://doi.org/10.1109/ICIPRM.2001.929117
- Chicago author-date
- Vanhollebeke, Koen, J Nica, Ingrid Moerman, and Peter Van Daele. 2001. “Realization of InAsP Compliant Substrates for the Fabrication of Lattice-Mismatched InP-Based Devices.” In Conference Proceedings : Indium Phosphide and Related Materials, 299–302. New York, NY, USA: IEEE. https://doi.org/10.1109/ICIPRM.2001.929117.
- Chicago author-date (all authors)
- Vanhollebeke, Koen, J Nica, Ingrid Moerman, and Peter Van Daele. 2001. “Realization of InAsP Compliant Substrates for the Fabrication of Lattice-Mismatched InP-Based Devices.” In Conference Proceedings : Indium Phosphide and Related Materials, 299–302. New York, NY, USA: IEEE. doi:10.1109/ICIPRM.2001.929117.
- Vancouver
- 1.Vanhollebeke K, Nica J, Moerman I, Van Daele P. Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices. In: Conference Proceedings : Indium Phosphide and Related Materials. New York, NY, USA: IEEE; 2001. p. 299–302.
- IEEE
- [1]K. Vanhollebeke, J. Nica, I. Moerman, and P. Van Daele, “Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices,” in Conference Proceedings : Indium Phosphide and Related Materials, Nara, Japan, 2001, pp. 299–302.
@inproceedings{401923,
abstract = {{Thin pseudomorphic InAs0.25P0.75 layers were grown by Metal Organic Vapor Phase Epitaxy (MOVPE) onto InP and subsequently successfully transferred to InP and Ge host substrates through direct bonding. Through in plane angular misalignment InAsyP1-y twist bonded compliant substrates were fabricated. The resulting substrates were analyzed using XRD, revealing important differences between using different host substrates. Lattice-mismatched In1-xGaxAs layers were grown onto these InAsP twist bonded compliant substrates by MOVPE. The lattice-mismatched InGaAs layers were analyzed using photoluminescence (PL) and X-ray diffraction (XRD) and compared to deposition onto InP substrates. Results indicate that the resulting InAsP TB compliant substrates can be used for the realization of low-defect density lattice-mismatched classically InP-based devices.}},
author = {{Vanhollebeke, Koen and Nica, J and Moerman, Ingrid and Van Daele, Peter}},
booktitle = {{Conference Proceedings : Indium Phosphide and Related Materials}},
isbn = {{9780780367005}},
issn = {{1092-8669}},
keywords = {{LAYERS}},
language = {{eng}},
location = {{Nara, Japan}},
pages = {{299--302}},
publisher = {{IEEE}},
title = {{Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices}},
url = {{http://doi.org/10.1109/ICIPRM.2001.929117}},
year = {{2001}},
}
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: