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Extended wavelength InGaAs detectors grown by metal-organic vapor phase epitaxy (MOVPE) on compliant substrates

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Organization
Abstract
Current extended wavelength InGaAs detectors (>1.7 mum) grown on InP are limited by the lattice-mismatch and consequent introduction of dislocations in the absorbing layer. In order to overcome these limits, GaAs based compliant substrates have been introduced for the growth of extended wavelength InGaAs detectors. In a first stage up to 3.8% lattice-mismatched InGaAs growth by MOVPE on GaAs compliant substrates has been investigated. Cross-hatch free surface morphology is obtained for epilayers with a thickness exceeding up to 50 times the Matthews-Blakeslee critical thickness. X-ray diffraction (XRD) indicates a reduced FWHM (Full Width Half Maximum) and tilting of the InGaAs lattice-mismatched epitaxial layers, thus suggesting a reduced misfit dislocation density (at the interface). Consequently highly mismatched (5-6%) and thick (1-2 mum) InGaAs layers for the development of InGaAs detectors up to 2.5 mum, were grown on GaAs compliant substrates. Dark current measurements on the InGaAs detectors developed on compliant substrates indicate a comparable dark current level as for ordinary GaAs substrates, but a significant improvement in dark current uniformity. Current research includes the fabrication and use of dual material compliant substrates, e.g. InGaAs layers bonded on GaAs or other host substrates (Ge,...), for the growth of less than 2-3% lattice-mismatched InGaAs based detectors.
Keywords
MOVPE, compliant substrates, InGaAs, SWIR, detector, PSEUDOMORPHIC STRUCTURES, CRITICAL THICKNESS, GRADED INXGA1-XAS, DARK CURRENT, PERFORMANCE, LAYERS, HETEROSTRUCTURES, TECHNOLOGY, RELAXATION, SCIAMACHY

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MLA
Vanhollebeke, Koen, Ingrid Moerman, Peter Van Daele, et al. “Extended Wavelength InGaAs Detectors Grown by Metal-organic Vapor Phase Epitaxy (MOVPE) on Compliant Substrates.” Proceedings of SPIE, the International Society for Optical Engineering. Ed. Hiroyuki Fujisada et al. Vol. 4169. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering, 2000. 325–336. Print.
APA
Vanhollebeke, K., Moerman, I., Van Daele, P., & Demeester, P. (2000). Extended wavelength InGaAs detectors grown by metal-organic vapor phase epitaxy (MOVPE) on compliant substrates. In H. Fujisada, J. B. Lurie, A. Ropertz, & K. Weber (Eds.), Proceedings of SPIE, the International Society for Optical Engineering (Vol. 4169, pp. 325–336). Presented at the Conference on Sensors, Systems, and Next-Generation Satellites IV, Bellingham, WA, USA: SPIE, the International Society for Optical Engineering.
Chicago author-date
Vanhollebeke, Koen, Ingrid Moerman, Peter Van Daele, and Piet Demeester. 2000. “Extended Wavelength InGaAs Detectors Grown by Metal-organic Vapor Phase Epitaxy (MOVPE) on Compliant Substrates.” In Proceedings of SPIE, the International Society for Optical Engineering, ed. Hiroyuki Fujisada, Joan B Lurie, Alexander Ropertz, and Konradin Weber, 4169:325–336. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering.
Chicago author-date (all authors)
Vanhollebeke, Koen, Ingrid Moerman, Peter Van Daele, and Piet Demeester. 2000. “Extended Wavelength InGaAs Detectors Grown by Metal-organic Vapor Phase Epitaxy (MOVPE) on Compliant Substrates.” In Proceedings of SPIE, the International Society for Optical Engineering, ed. Hiroyuki Fujisada, Joan B Lurie, Alexander Ropertz, and Konradin Weber, 4169:325–336. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering.
Vancouver
1.
Vanhollebeke K, Moerman I, Van Daele P, Demeester P. Extended wavelength InGaAs detectors grown by metal-organic vapor phase epitaxy (MOVPE) on compliant substrates. In: Fujisada H, Lurie JB, Ropertz A, Weber K, editors. Proceedings of SPIE, the International Society for Optical Engineering. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering; 2000. p. 325–36.
IEEE
[1]
K. Vanhollebeke, I. Moerman, P. Van Daele, and P. Demeester, “Extended wavelength InGaAs detectors grown by metal-organic vapor phase epitaxy (MOVPE) on compliant substrates,” in Proceedings of SPIE, the International Society for Optical Engineering, Barcelona, Spain, 2000, vol. 4169, pp. 325–336.
@inproceedings{401606,
  abstract     = {Current extended wavelength InGaAs detectors (>1.7 mum) grown on InP are limited by the lattice-mismatch and consequent introduction of dislocations in the absorbing layer. In order to overcome these limits, GaAs based compliant substrates have been introduced for the growth of extended wavelength InGaAs detectors. In a first stage up to 3.8% lattice-mismatched InGaAs growth by MOVPE on GaAs compliant substrates has been investigated. Cross-hatch free surface morphology is obtained for epilayers with a thickness exceeding up to 50 times the Matthews-Blakeslee critical thickness. X-ray diffraction (XRD) indicates a reduced FWHM (Full Width Half Maximum) and tilting of the InGaAs lattice-mismatched epitaxial layers, thus suggesting a reduced misfit dislocation density (at the interface).
Consequently highly mismatched (5-6%) and thick (1-2 mum) InGaAs layers for the development of InGaAs detectors up to 2.5 mum, were grown on GaAs compliant substrates. Dark current measurements on the InGaAs detectors developed on compliant substrates indicate a comparable dark current level as for ordinary GaAs substrates, but a significant improvement in dark current uniformity. Current research includes the fabrication and use of dual material compliant substrates, e.g. InGaAs layers bonded on GaAs or other host substrates (Ge,...), for the growth of less than 2-3% lattice-mismatched InGaAs based detectors.},
  author       = {Vanhollebeke, Koen and Moerman, Ingrid and Van Daele, Peter and Demeester, Piet},
  booktitle    = {Proceedings of SPIE, the International Society for Optical Engineering},
  editor       = {Fujisada, Hiroyuki and Lurie, Joan B and Ropertz, Alexander and Weber, Konradin},
  isbn         = {0-8194-3825-1},
  issn         = {0277-786X},
  keywords     = {MOVPE,compliant substrates,InGaAs,SWIR,detector,PSEUDOMORPHIC STRUCTURES,CRITICAL THICKNESS,GRADED INXGA1-XAS,DARK CURRENT,PERFORMANCE,LAYERS,HETEROSTRUCTURES,TECHNOLOGY,RELAXATION,SCIAMACHY},
  language     = {eng},
  location     = {Barcelona, Spain},
  pages        = {325--336},
  publisher    = {SPIE, the International Society for Optical Engineering},
  title        = {Extended wavelength InGaAs detectors grown by metal-organic vapor phase epitaxy (MOVPE) on compliant substrates},
  url          = {http://dx.doi.org/10.1117/12.417138},
  volume       = {4169},
  year         = {2000},
}

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