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Dark current optimisation of 2.5 µm wavelength, 2% mismatched InGaAs photodetectors on InP

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Abstract
In this paper we report state of the art dark current densities for 2% mismatched In0.82Ga0.18As photodetectors, for 2.5 mu m wavelength light absorption. This is obtained by tuning the n-type doping level of the detector's absorbing layer. Detectors with a 5x10(16)/cm(3) doped absorbing laver exhibit a median dark current density of only 10(-9) A/cm(2) (at -10mV bias and 150K). Measurement of the dark current as a function of temperature give qualitative as well as quantitative information on the different mechanisms contributing to the dark current. The reduction of the photoresponse remains acceptable for the optimised doping of the absorbing layer. The cut-off wavelength is about 2.6 mu m.

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Chicago
D’Hondt, Mark, Ingrid Moerman, and Piet Demeester. 1998. “Dark Current Optimisation of 2.5 Μm Wavelength, 2% Mismatched InGaAs Photodetectors on InP.” In Conference Proceedings : Indium Phosphide and Related Materials, 489–492. New York, NY, USA: IEEE.
APA
D’Hondt, Mark, Moerman, I., & Demeester, P. (1998). Dark current optimisation of 2.5 µm wavelength, 2% mismatched InGaAs photodetectors on InP. Conference Proceedings : Indium Phosphide and Related Materials (pp. 489–492). Presented at the International conference on Indium Phosphide and Related Materials (IPRM 1998), New York, NY, USA: IEEE.
Vancouver
1.
D’Hondt M, Moerman I, Demeester P. Dark current optimisation of 2.5 µm wavelength, 2% mismatched InGaAs photodetectors on InP. Conference Proceedings : Indium Phosphide and Related Materials. New York, NY, USA: IEEE; 1998. p. 489–92.
MLA
D’Hondt, Mark, Ingrid Moerman, and Piet Demeester. “Dark Current Optimisation of 2.5 Μm Wavelength, 2% Mismatched InGaAs Photodetectors on InP.” Conference Proceedings : Indium Phosphide and Related Materials. New York, NY, USA: IEEE, 1998. 489–492. Print.
@inproceedings{399547,
  abstract     = {In this paper we report state of the art dark current densities for 2\% mismatched In0.82Ga0.18As photodetectors, for 2.5 mu m wavelength light absorption. This is obtained by tuning the n-type doping level of the detector's absorbing layer. Detectors with a 5x10(16)/cm(3) doped absorbing laver exhibit a median dark current density of only 10(-9) A/cm(2) (at -10mV bias and 150K). Measurement of the dark current as a function of temperature give qualitative as well as quantitative information on the different mechanisms contributing to the dark current. The reduction of the photoresponse remains acceptable for the optimised doping of the absorbing layer. The cut-off wavelength is about 2.6 mu m.},
  author       = {D'Hondt, Mark and Moerman, Ingrid and Demeester, Piet},
  booktitle    = {Conference Proceedings : Indium Phosphide and Related Materials},
  isbn         = {9780780342200},
  issn         = {1092-8669},
  language     = {eng},
  location     = {Ibaraki, Japan},
  pages        = {489--492},
  publisher    = {IEEE},
  title        = {Dark current optimisation of 2.5 {\textmu}m wavelength, 2\% mismatched InGaAs photodetectors on InP},
  url          = {http://dx.doi.org/10.1109/ICIPRM.1998.712565},
  year         = {1998},
}

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