- Author
- W VAN DER STRICHT, Koen Jacobs, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH, J CRAWLEY and P RUTERANA
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-399378
- MLA
- VAN DER STRICHT, W, Koen Jacobs, Ingrid Moerman, et al. “High Indium Content InGaN Films and Quantum Wells.” Ed. SP DenBaars et al. NITRIDE SEMICONDUCTORS (1998): 107–112. Print.
- APA
- VAN DER STRICHT, W., Jacobs, K., Moerman, I., Demeester, P., CONSIDINE, L., THRUSH, E., CRAWLEY, J., et al. (1998). High indium content InGaN films and quantum wells. (S. DenBaars, B. Meyer, S. Nakamura, F. Ponce, & S. Strite, Eds.)NITRIDE SEMICONDUCTORS, 107–112.
- Chicago author-date
- VAN DER STRICHT, W, Koen Jacobs, Ingrid Moerman, Piet Demeester, L CONSIDINE, EJ THRUSH, J CRAWLEY, and P RUTERANA. 1998. “High Indium Content InGaN Films and Quantum Wells.” Ed. SP DenBaars, BK Meyer, S Nakamura, FA Ponce, and S Strite. Nitride Semiconductors: 107–112.
- Chicago author-date (all authors)
- VAN DER STRICHT, W, Koen Jacobs, Ingrid Moerman, Piet Demeester, L CONSIDINE, EJ THRUSH, J CRAWLEY, and P RUTERANA. 1998. “High Indium Content InGaN Films and Quantum Wells.” Ed. SP DenBaars, BK Meyer, S Nakamura, FA Ponce, and S Strite. Nitride Semiconductors: 107–112.
- Vancouver
- 1.VAN DER STRICHT W, Jacobs K, Moerman I, Demeester P, CONSIDINE L, THRUSH E, et al. High indium content InGaN films and quantum wells. DenBaars S, Meyer B, Nakamura S, Ponce F, Strite S, editors. NITRIDE SEMICONDUCTORS. MATERIALS RESEARCH SOCIETY; 1998;107–12.
- IEEE
- [1]W. VAN DER STRICHT et al., “High indium content InGaN films and quantum wells.,” NITRIDE SEMICONDUCTORS, pp. 107–112, 1998.
@article{399378,
author = {VAN DER STRICHT, W and Jacobs, Koen and Moerman, Ingrid and Demeester, Piet and CONSIDINE, L and THRUSH, EJ and CRAWLEY, J and RUTERANA, P},
editor = {DenBaars, SP and Meyer, BK and Nakamura, S and Ponce, FA and Strite, S},
isbn = {1-55899-387-8},
issn = {0272-9172},
journal = {NITRIDE SEMICONDUCTORS},
language = {eng},
pages = {107--112},
publisher = {MATERIALS RESEARCH SOCIETY},
title = {High indium content InGaN films and quantum wells.},
year = {1998},
}