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Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

(2007) PHYSICA B-CONDENSED MATTER. 401. p.222-225
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Chicago
GAUBAS, E, Jan Vanhellemont, E SIMOEN, I ROMANDIC, W GEENS, and Paul Clauws. 2007. “Carrier Lifetime Dependence on Doping, Metal Implants and Excitation Density in Ge and Si.” Physica B-condensed Matter 401: 222–225.
APA
GAUBAS, E., Vanhellemont, J., SIMOEN, E., ROMANDIC, I., GEENS, W., & Clauws, P. (2007). Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si. PHYSICA B-CONDENSED MATTER, 401, 222–225.
Vancouver
1.
GAUBAS E, Vanhellemont J, SIMOEN E, ROMANDIC I, GEENS W, Clauws P. Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si. PHYSICA B-CONDENSED MATTER. Elsevier Science; 2007;401:222–5.
MLA
GAUBAS, E, Jan Vanhellemont, E SIMOEN, et al. “Carrier Lifetime Dependence on Doping, Metal Implants and Excitation Density in Ge and Si.” PHYSICA B-CONDENSED MATTER 401 (2007): 222–225. Print.
@article{386679,
  author       = {GAUBAS, E and Vanhellemont, Jan and SIMOEN, E and ROMANDIC, I and GEENS, W and Clauws, Paul},
  issn         = {0921-4526},
  journal      = {PHYSICA B-CONDENSED MATTER},
  language     = {eng},
  pages        = {222--225},
  publisher    = {Elsevier Science},
  title        = {Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si},
  volume       = {401},
  year         = {2007},
}

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