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Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth

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Chicago
SPIEWAK, P, KJ KURZYDLOWSKI, Jan Vanhellemont, Paul Clauws, P WABINSKI, K MLYNARCZYK, I ROMANDIC, and Antoon Theuwis. 2006. “Simulation of Intrinsic Point Defect Properties and Vacancy Clustering During Czochralski Germanium Crystal Growth.” Materials Science in Semiconductor Processing 9 (4-5): 465–470.
APA
SPIEWAK, P., KURZYDLOWSKI, K., Vanhellemont, J., Clauws, P., WABINSKI, P., MLYNARCZYK, K., ROMANDIC, I., et al. (2006). Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 9(4-5), 465–470.
Vancouver
1.
SPIEWAK P, KURZYDLOWSKI K, Vanhellemont J, Clauws P, WABINSKI P, MLYNARCZYK K, et al. Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. ELSEVIER SCI LTD; 2006;9(4-5):465–70.
MLA
SPIEWAK, P, KJ KURZYDLOWSKI, Jan Vanhellemont, et al. “Simulation of Intrinsic Point Defect Properties and Vacancy Clustering During Czochralski Germanium Crystal Growth.” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 9.4-5 (2006): 465–470. Print.
@article{354119,
  author       = {SPIEWAK, P and KURZYDLOWSKI, KJ and Vanhellemont, Jan and Clauws, Paul and WABINSKI, P and MLYNARCZYK, K and ROMANDIC, I and Theuwis, Antoon},
  issn         = {1369-8001},
  journal      = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
  language     = {eng},
  number       = {4-5},
  pages        = {465--470},
  publisher    = {ELSEVIER SCI LTD},
  title        = {Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth},
  volume       = {9},
  year         = {2006},
}

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