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Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon

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Abstract
Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium crystals with special emphasis on intrinsic point defects, on vacancy clustering and on interstitial oxygen. Whenever useful the results are compared with those obtained for silicon.

Citation

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MLA
Vanhellemont, Jan, S HENS, Johan Lauwaert, et al. “Recent Progress in Understanding of Lattice Defects in Czochralski-grown Germanium: Catching-up with Silicon.” GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI 108-109 (2005): 683–690. Print.
APA
Vanhellemont, J., HENS, S., Lauwaert, J., DE GRYSE, O., Vanmeerbeek, P., Poelman, D., SPIEWAK, P., et al. (2005). Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 108-109, 683–690.
Chicago author-date
Vanhellemont, Jan, S HENS, Johan Lauwaert, O DE GRYSE, Piet Vanmeerbeek, Dirk Poelman, P SPIEWAK, I ROMANDIC, Antoon Theuwis, and Paul Clauws. 2005. “Recent Progress in Understanding of Lattice Defects in Czochralski-grown Germanium: Catching-up with Silicon.” Gettering and Defect Engineering in Semiconductor Technology Xi 108-109: 683–690.
Chicago author-date (all authors)
Vanhellemont, Jan, S HENS, Johan Lauwaert, O DE GRYSE, Piet Vanmeerbeek, Dirk Poelman, P SPIEWAK, I ROMANDIC, Antoon Theuwis, and Paul Clauws. 2005. “Recent Progress in Understanding of Lattice Defects in Czochralski-grown Germanium: Catching-up with Silicon.” Gettering and Defect Engineering in Semiconductor Technology Xi 108-109: 683–690.
Vancouver
1.
Vanhellemont J, HENS S, Lauwaert J, DE GRYSE O, Vanmeerbeek P, Poelman D, et al. Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI. TRANS TECH PUBLICATIONS LTD; 2005;108-109:683–90.
IEEE
[1]
J. Vanhellemont et al., “Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon,” GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, vol. 108–109, pp. 683–690, 2005.
@article{350843,
  abstract     = {Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium crystals with special emphasis on intrinsic point defects, on vacancy clustering and on interstitial oxygen. Whenever useful the results are compared with those obtained for silicon.},
  author       = {Vanhellemont, Jan and HENS, S and Lauwaert, Johan and DE GRYSE, O and Vanmeerbeek, Piet and Poelman, Dirk and SPIEWAK, P and ROMANDIC, I and Theuwis, Antoon and Clauws, Paul},
  issn         = {1012-0394},
  journal      = {GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI},
  language     = {eng},
  pages        = {683--690},
  publisher    = {TRANS TECH PUBLICATIONS LTD},
  title        = {Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon},
  volume       = {108-109},
  year         = {2005},
}

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