Advanced search

On the effect of surface pretreatment upon the electronic structure of n-GaN surfaces

Author
Organization

Citation

Please use this url to cite or link to this publication:

Chicago
Strubbe, Katrien, Walter Gomes, and Inge Huygens. 2005. “On the Effect of Surface Pretreatment Upon the Electronic Structure of n-GaN Surfaces.” In Proceedings of the International Symposium “Processes at the Compound-Semiconductor/Solution Interface”, ed. P Chang, 3–15.
APA
Strubbe, K., Gomes, W., & Huygens, I. (2005). On the effect of surface pretreatment upon the electronic structure of n-GaN surfaces. In P. Chang (Ed.), Proceedings of the International Symposium “Processes at the Compound-Semiconductor/Solution Interface” (pp. 3–15).
Vancouver
1.
Strubbe K, Gomes W, Huygens I. On the effect of surface pretreatment upon the electronic structure of n-GaN surfaces. In: Chang P, editor. Proceedings of the International Symposium “Processes at the Compound-Semiconductor/Solution Interface.” 2005. p. 3–15.
MLA
Strubbe, Katrien, Walter Gomes, and Inge Huygens. “On the Effect of Surface Pretreatment Upon the Electronic Structure of n-GaN Surfaces.” Proceedings of the International Symposium “Processes at the Compound-Semiconductor/Solution Interface.” Ed. P Chang. 2005. 3–15. Print.
@inproceedings{343744,
  author       = {Strubbe, Katrien and Gomes, Walter and Huygens, Inge},
  booktitle    = {Proceedings of the International Symposium "Processes at the Compound-Semiconductor/Solution Interface"},
  editor       = {Chang, P},
  pages        = {3--15},
  title        = {On the effect of surface pretreatment upon the electronic structure of n-GaN surfaces},
  year         = {2005},
}