Advanced search

Defect luminescence at n-GaN electrodes - A comparative study between n-GaN grown on sapphire substrates and on Si substrates

Author
Organization

Citation

Please use this url to cite or link to this publication:

Chicago
Huygens, Inge, Walter Gomes, and Katrien Strubbe. 2006. “Defect Luminescence at n-GaN Electrodes - A Comparative Study Between n-GaN Grown on Sapphire Substrates and on Si Substrates.” Journal of the Electrochemical Society 153 (1): 72.
APA
Huygens, I., Gomes, W., & Strubbe, K. (2006). Defect luminescence at n-GaN electrodes - A comparative study between n-GaN grown on sapphire substrates and on Si substrates. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(1), 72.
Vancouver
1.
Huygens I, Gomes W, Strubbe K. Defect luminescence at n-GaN electrodes - A comparative study between n-GaN grown on sapphire substrates and on Si substrates. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. ELECTROCHEMICAL SOC INC; 2006;153(1):72.
MLA
Huygens, Inge, Walter Gomes, and Katrien Strubbe. “Defect Luminescence at n-GaN Electrodes - A Comparative Study Between n-GaN Grown on Sapphire Substrates and on Si Substrates.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153.1 (2006): 72. Print.
@article{332820,
  author       = {Huygens, Inge and Gomes, Walter and Strubbe, Katrien},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {1},
  pages        = {G72-G77},
  publisher    = {ELECTROCHEMICAL SOC INC},
  title        = {Defect luminescence at n-GaN electrodes - A comparative study between n-GaN grown on sapphire substrates and on Si substrates},
  volume       = {153},
  year         = {2006},
}

Web of Science
Times cited: