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DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

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MLA
HUANG, YL, E SIMOEN, C CLAEYS, et al. “DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon.” GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI 108-109 (2005): 547–552. Print.
APA
HUANG, YL, SIMOEN, E., CLAEYS, C., JOB, R., MA, Y., DUNGEN, W., FAHRNER, W., et al. (2005). DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 108-109, 547–552.
Chicago author-date
HUANG, YL, E SIMOEN, C CLAEYS, R JOB, Y MA, W DUNGEN, WR FAHRNER, Jorg Versluys, and Paul Clauws. 2005. “DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon.” Gettering and Defect Engineering in Semiconductor Technology Xi 108-109: 547–552.
Chicago author-date (all authors)
HUANG, YL, E SIMOEN, C CLAEYS, R JOB, Y MA, W DUNGEN, WR FAHRNER, Jorg Versluys, and Paul Clauws. 2005. “DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon.” Gettering and Defect Engineering in Semiconductor Technology Xi 108-109: 547–552.
Vancouver
1.
HUANG Y, SIMOEN E, CLAEYS C, JOB R, MA Y, DUNGEN W, et al. DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI. TRANS TECH PUBLICATIONS LTD; 2005;108-109:547–52.
IEEE
[1]
Y. HUANG et al., “DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon,” GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, vol. 108–109, pp. 547–552, 2005.
@article{325901,
  author       = {HUANG, YL and SIMOEN, E and CLAEYS, C and JOB, R and MA, Y and DUNGEN, W and FAHRNER, WR and Versluys, Jorg and Clauws, Paul},
  issn         = {1012-0394},
  journal      = {GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI},
  language     = {eng},
  pages        = {547--552},
  publisher    = {TRANS TECH PUBLICATIONS LTD},
  title        = {DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon},
  volume       = {108-109},
  year         = {2005},
}

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