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Temperature independent slow hole emission from transition metal centers in germanium

Siegfried Segers UGent, Johan Lauwaert UGent, Paul Clauws, Freddy Callens UGent, Jan Vanhellemont UGent, Eddy Simoen and Henk Vrielinck UGent (2013) E-MRS spring meeting, Abstracts.
abstract
The high carrier (drift) mobility makes Ge an interesting material for use in advanced electronic devices. This perspective has caused a revival of the interest in the electronic properties of impurities and defects in Ge.[1] Due to its high sensitivity and resolution, deep level transient spectroscopy (DLTS) is one of the preferred techniques to study these properties. During the last few years, DLTS has been used for a comprehensive study of a series of 3d transition metal impurities in Ge, among which Co and Cr. [2,3] Besides the thermal carrier emission, for the latter defect levels, a second, slow, temperature independent emission component is observed, which is the subject of this work. A comparable emission component has also been reported for quantum dots and assigned to tunneling ([4] and references therein). It is shown that this tunnel component can provide additional information on the deep level defects. It allows to study capture and emission characteristics over a much wider temperature range that can be covered by observing thermionic emission. Moreover, in the analysis of DLTS spectra exhibiting multiple peaks, it may allow to establish whether or not these arise from the same defect. [1] Germanium-based technologies, ed. C.Claeys and E. Simoen, 2007 [2] J. Lauwaert et al., J.Appl. Phys., 105:073707, 2009 [3] J. Lauwaert et al., J.Appl. Phys, 111:113713, 2012 [4] A. Schramm et al., Phys. Rev. B, 80:155316, 2009
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
E-MRS spring meeting, Abstracts
conference name
E-MRS 2013 Spring meeting
conference location
Strasbourg, France
conference start
2013-05-27
conference end
2013-05-31
project
FWO: B/10843/03
language
English
UGent publication?
yes
classification
C3
id
3232948
handle
http://hdl.handle.net/1854/LU-3232948
date created
2013-06-03 11:36:45
date last changed
2016-12-19 15:37:32
@inproceedings{3232948,
  abstract     = {The high carrier (drift) mobility makes Ge an interesting material for use in advanced electronic devices. This perspective has caused a revival of the interest in the electronic properties of impurities and defects in Ge.[1] Due to its high sensitivity and resolution, deep level transient spectroscopy (DLTS) is one of the preferred techniques to study these properties. During the last few years, DLTS has been used for a comprehensive study of a series of 3d transition metal impurities in Ge, among which Co and Cr. [2,3] Besides the thermal carrier emission, for the latter defect levels, a second, slow, temperature independent emission component is observed, which is the subject of this work. A comparable emission component has also been reported for quantum dots and assigned to tunneling ([4] and references therein). It is shown that this tunnel component can provide additional information on the deep level defects. It allows to study capture and emission characteristics over a much wider temperature range that can be covered by observing thermionic emission. Moreover, in the analysis of DLTS spectra exhibiting multiple peaks, it may allow to establish whether or not these arise from the same defect.
[1] Germanium-based technologies, ed. C.Claeys and E. Simoen, 2007
[2] J. Lauwaert et al., J.Appl. Phys., 105:073707, 2009
[3] J. Lauwaert et al., J.Appl. Phys, 111:113713, 2012
[4] A. Schramm et al., Phys. Rev. B, 80:155316, 2009},
  author       = {Segers, Siegfried and Lauwaert, Johan and Clauws, Paul and Callens, Freddy and Vanhellemont, Jan and Simoen, Eddy and Vrielinck, Henk},
  booktitle    = {E-MRS spring meeting, Abstracts},
  language     = {eng},
  location     = {Strasbourg, France},
  title        = {Temperature independent slow hole emission from transition metal centers in germanium},
  year         = {2013},
}

Chicago
Segers, Siegfried, Johan Lauwaert, Paul Clauws, Freddy Callens, Jan Vanhellemont, Eddy Simoen, and Henk Vrielinck. 2013. “Temperature Independent Slow Hole Emission from Transition Metal Centers in Germanium.” In E-MRS Spring Meeting, Abstracts.
APA
Segers, Siegfried, Lauwaert, J., Clauws, P., Callens, F., Vanhellemont, J., Simoen, E., & Vrielinck, H. (2013). Temperature independent slow hole emission from transition metal centers in germanium. E-MRS spring meeting, Abstracts. Presented at the E-MRS 2013 Spring meeting.
Vancouver
1.
Segers S, Lauwaert J, Clauws P, Callens F, Vanhellemont J, Simoen E, et al. Temperature independent slow hole emission from transition metal centers in germanium. E-MRS spring meeting, Abstracts. 2013.
MLA
Segers, Siegfried, Johan Lauwaert, Paul Clauws, et al. “Temperature Independent Slow Hole Emission from Transition Metal Centers in Germanium.” E-MRS Spring Meeting, Abstracts. 2013. Print.